Abstract
Resonance detection of terahertz radiation by submicrometer field-effect GaAs/AlGaAs transistors (with the gate length L = 250 nm) with two-dimensional electron gas in the channel has been studied at T = 4.2 K. For these transistors, it is shown for the first time that the maximum of the response (the drain-source photovoltage) shifts with an increasing frequency to the region of higher gate voltages in accordance with the Dyakonov-Shur theory. It is shown that, as temperature is increased to 77 K, the dependence of the photovoltage on the gate voltage becomes nonresonant, which is caused by a decrease in the mobility.
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Original Russian Text © A.V. Antonov, V.I. Gavrilenko, K.V. Maremyanin, S.V. Morozov, F. Teppe, W. Knap, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 4, pp. 552–555.
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Antonov, A.V., Gavrilenko, V.I., Maremyanin, K.V. et al. Resonance detection of terahertz radiation in submicrometer field-effect GaAs/AlGaAs transistors with two-dimensional electron gas. Semiconductors 43, 528–531 (2009). https://doi.org/10.1134/S106378260904023X
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DOI: https://doi.org/10.1134/S106378260904023X