Abstract
Effect of doping with europium on the shape of the spectra of emission from structures with quantum wells based on In x Ga1−x N/GaN, on the mechanism of doping, and the intensity of emission caused by intracenter f-f transitions in Eu is studied. According to the data of Mössbauer spectroscopy, the doping Eu impurity can have the charge state of the impurity ion of Eu2+ and Eu3+ or Eu3+ only. In the case where the charge state of the impurity ion is Eu3+, emission related to the intracenter transitions 5 D 0−7 F 2 (λ = 6220 Å) is observed. If the impurity ion can be found in the charge states Eu2+ and Eu3+, the emission related to the intracenter transitions characteristic of both Eu2+ and Eu3+ is not observed.
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Original Russian Text © M.M. Mezdrogina, V.V. Krivolapchuk, V.N. Petrov, Yu.V. Kozhanova, E.Yu. Danilovski, R.V. Kuz’min, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 4, pp. 467–477.
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Mezdrogina, M.M., Krivolapchuk, V.V., Petrov, V.N. et al. Mechanisms of doping and the intensity of emission from intracenter f-f transitions in the doping Eu impurity in structures with In x Ga1 − x N/GaN quantum wells. Semiconductors 43, 447–457 (2009). https://doi.org/10.1134/S1063782609040083
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DOI: https://doi.org/10.1134/S1063782609040083