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Optical and structural characteristics of Ga-doped ZnO films

  • Electronic and Optical Properties of Semiconductors
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Abstract

The n-ZnO films doped with Ga to the content 2.5 at % are produced by pulse laser deposition onto the (0001) oriented single crystal sapphire substrates. The transmittance spectra of the ZnO films in the range from 200 to 3200 nm are studied in relation to the Ga dopant content. It is established that an increase in the Ga content shifts the fundamental absorption edge to the blue region, but reduces the transparency of the ZnO films in the infrared spectral region. The dependence of the band gap on the level of doping with Ga is determined. The photoluminescence spectra of the ZnO films doped to different levels are recorded. It is established that the PL intensity and peak position vary unsteadily with the level of doping. X-ray diffraction studies of the structure of the films are carried out. It is found that the crystallographic parameters (the lattice constant c) of the ZnO film depend on the Ga dopant content and the conditions of deposition of the films.

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Authors and Affiliations

  1. Institute on Laser and Information Technologies, Russian Academy of Sciences, Shatura, Moscow oblast, 140700, Russia

    O. A. Novodvorsky, L. S. Gorbatenko, V. Ya. Panchenko, O. D. Khramova & Ye. A. Cherebilo

  2. Institute of Semiconductor and Microsystem Technology, University of Technology, Dresden, D-01063, Germany

    C. Wenzel & J. W. Bartha

  3. Moscow State Institute of Steel and Alloys (Technological University), Moscow, 119049, Russia

    V. T. Bublik & K. D. Shcherbachev

Authors
  1. O. A. Novodvorsky
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  2. L. S. Gorbatenko
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  3. V. Ya. Panchenko
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  4. O. D. Khramova
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  5. Ye. A. Cherebilo
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  6. C. Wenzel
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  7. J. W. Bartha
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  8. V. T. Bublik
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  9. K. D. Shcherbachev
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Correspondence to O. A. Novodvorsky.

Additional information

Original Russian Text © O.A. Novodvorsky, L.S. Gorbatenko, V.Ya. Panchenko, O.D. Khramova, Ye.A. Cherebilo, C. Wenzel, J.W. Bartha, V.T. Bublik, K.D. Shcherbachev, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 4, pp. 439–444.

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Novodvorsky, O.A., Gorbatenko, L.S., Panchenko, V.Y. et al. Optical and structural characteristics of Ga-doped ZnO films. Semiconductors 43, 419–424 (2009). https://doi.org/10.1134/S1063782609040034

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  • DOI: https://doi.org/10.1134/S1063782609040034

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