Abstract
For disc lasers based on the InAs/InAsSbP heterostructure with a generation wavelength of 3.03–3.06 μm, the internal quantum yield of luminescence and rates of radiative and nonradiative recombination in a temperature range of 85–120 K are determined. It is established that as the temperature increases, the relative contribution of the rate of nonradiative recombination to the density of the threshold current increases from 89.9 to 92.8%. It is shown that the most probable mechanisms of nonradiative transitions in the InAs/InAsSbP disc heterolasers can be the CHCC and CHSH Auger processes with involvement of phonons. Coefficients of total losses for two experimentally observed generation bands are determined, and the maximum level of the internal optical losses is estimated. The figure of merit of the resonator of the InAs/InAsSbP disc heterolaser is ∼104.
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Original Russian Text © V.V. Kabanov, E.V. Lebiadok, A.G. Ryabtsev, G.I. Ryabtsev, M.A. Schemelev, V.V. Sherstnev, A.P. Astakhova, Yu.P. Yakovlev, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 4, pp. 522–526.
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Kabanov, V.V., Lebiadok, E.V., Ryabtsev, A.G. et al. The temperature dependence of internal parameters of disc laser diodes InAs/InAsSbP. Semiconductors 43, 500–504 (2009). https://doi.org/10.1134/S1063782609040174
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DOI: https://doi.org/10.1134/S1063782609040174