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High-voltage (1800 V) planar 4H-SiC p-n junctions with floating guard rings

  • Physics of Semiconductor Devices
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Abstract

Planar 4H-SiC p-n junctions with floating guard rings have been fabricated. The main junction and the rings were formed by room temperature boron implantation followed by high temperature annealing. The breakdown voltage of the p-n junctions is 1800 V, which twice exceeds that of similar junctions without guard rings and reaches 72% of the calculated breakdown voltage of a plane-parallel p-n junction with the same epitaxial layer parameters

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References

  1. I. V. Grekhov, P. A. Ivanov, N. D. Il’inskaya, O. I. Kon’kov, A. S. Potapov, and T. P. Samsonova, Fiz. Tekh. Poluprovodn. 42, 211 (2008) [Semiconductors 42, 211 (2008)].

    Google Scholar 

  2. P. A. Ivanov, I. V. Grekhov, A. S. Potapov, and T. P. Samsonova, Fiz. Tekh. Poluprovodn. 42, 878 (2008) [Semiconductors 42, 858 (2008)].

    Google Scholar 

  3. V. Anantharam and K. N. Bhat, IEEE Trans. Electron. Dev. ED-27, 939 (1980).

    Article  Google Scholar 

  4. P. A. Ivanov, I. V. Grekhov, N. D. Il’inskaya, and T. P. Samsonova, Fiz. Tekh. Poluprovodn. 39, 1475 (2005) [Semiconductors 39, 1426 (2005)].

    Google Scholar 

  5. D. C. Sheridan, G. Niu, J. N. Merrett, J. D. Cressler, C. Ellis, and C.-C. Tin. Solid State Electron. 44, 1367 (2000).

    Article  ADS  Google Scholar 

  6. W. Bahng, G. H. Song, H. W. Kim, K. S. Seo, and N. K. Kim, Mater. Sci. Forum. 457–460, 1013 (2004).

    Article  Google Scholar 

  7. T. Yamamoto, T. Endo, N. Kato, H. Nakamura, and T. Sakakibara, Mater. Sci. Forum. 556–557, 857 (2007).

    Article  Google Scholar 

  8. B. J. Baliga, Solid State Electron. 19, 739 (1976).

    Article  ADS  Google Scholar 

  9. K. D. Suh, S. W. Hong, K. Lee, and C.-K. Kim, Solid State Electron. 33, 1125 (1990).

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation

    P. A. Ivanov, I. V. Grekhov, N. D. Il’inskaya, T. P. Samsonova & A. S. Potapov

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  1. P. A. Ivanov
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  2. I. V. Grekhov
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  3. N. D. Il’inskaya
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  4. T. P. Samsonova
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  5. A. S. Potapov
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Correspondence to P. A. Ivanov.

Additional information

Original Russian Text © P.A. Ivanov, I.V. Grekhov, N.D. Il’inskaya, T.P. Samsonova, A.S. Potapov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 4, pp. 527–530.

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Ivanov, P.A., Grekhov, I.V., Il’inskaya, N.D. et al. High-voltage (1800 V) planar 4H-SiC p-n junctions with floating guard rings. Semiconductors 43, 505–507 (2009). https://doi.org/10.1134/S1063782609040186

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  • DOI: https://doi.org/10.1134/S1063782609040186

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