Abstract
Depth profiling of semiconductor structures by X-ray microanalysis using the electron probe variation technique followed by mathematical processing of the measurement results is described. Experimental dependences of the relative X-ray intensity on the energy of the electron probe were compared to the Monte Carlo simulation results. Concentration depth profiles were estimated using a priori assumptions, and numerical parameters of the depth distributions were determined from the best fit of calculated curves to the experimental data. The technique was applied to determine Al depth profiles in SiC and GaN samples.
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References
D. R. Penn, Phys. Rev. B 35, 482 (1987).
R. Shimizu and Z. J. Ding, Rep. Progr. Phys. 55, 487 (1992).
T. B. Popova, L. A. Bakaleinikov, M. V. Zamoryanskaya, and E. Yu. Flegontova, Fiz. Tekh. Poluprovodn. 42(6), 686 (2008) [Semiconductors 42, 669 (2008)].
Dzh. K. Fidler and K. Neitingeil, Computer Projection of Electronic Schemes (Vyssh. Shkola, Moscow, 1985) [in Russian].
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Original Russian Text © L.A. Bakaleinikov, Ya.V. Domrachova, E.V. Kolesnikova, M.V. Zamoryanskaya, T.B. Popova, E.Yu. Flegontova, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 4, pp. 568–573.
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Bakaleinikov, L.A., Domrachova, Y.V., Kolesnikova, E.V. et al. Depth profiling of semiconductor structures by X-ray microanalysis using the electron probe energy variation technique. Semiconductors 43, 544–549 (2009). https://doi.org/10.1134/S1063782609040265
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DOI: https://doi.org/10.1134/S1063782609040265