Phase formation and phase transformations in Bi-Te films with nanoscale thickness K. M. Akhmedov Atomic Structure and Nonelectronic Properties of Semiconductors 10 September 2008 Pages: 1009 - 1011
Relaxation processes in conductivity of Cd1 − x Mn x Te crystals (0.02 < x < 0.55) E. S. NikonyukZ. I. ZakharukI. M. Yuriychuk Electronic and Optical Properties of Semiconductors 10 September 2008 Pages: 1012 - 1015
Relaxation of excited donor states in silicon with emission of intervalley phonons V. V. TsyplenkovE. V. DemidovV. N. Shastin Electronic and Optical Properties of Semiconductors 10 September 2008 Pages: 1016 - 1022
Specific features of luminescence spectra of ZnS:O and ZnS:Cu(O) crystals in the context of the band anticrossing theory N. K. MorozovaD. A. MiderosE. M. Gavrishchuk Electronic and Optical Properties of Semiconductors 10 September 2008 Pages: 1023 - 1029
Study of single crystals of the CuIn3Se5 ternary compound I. V. Bodnar’ Electronic and Optical Properties of Semiconductors 10 September 2008 Pages: 1030 - 1033
Effect of magnetic field on the current-voltage characteristic of the n-GaAs-p-Ge heterojunction M. M. GadjialievZ. Sh. Pirmagomedov Electronic and Optical Properties of Semiconductors 10 September 2008 Pages: 1034 - 1036
Cyclic behavior of ultrafast self-modulation of the light-absorption spectrum under conditions of pump and stimulated emission in GaAs N. N. AgeevaI. L. BronevoiT. A. Nalet Electronic and Optical Properties of Semiconductors 10 September 2008 Pages: 1037 - 1043
Variations in the impurity composition and microhardness of surface layers in silicon crystals caused by a magnetic field V. A. MakaraM. A. VasilievS. N. Naumenko Semiconductor Structures, Interfaces, and Surfaces 10 September 2008 Pages: 1044 - 1047
Methylthiol adsorption on GaAs(100)-(2 × 4) surface: Ab initio quantum-chemical analysis M. V. Lebedev Semiconductor Structures, Interfaces, and Surfaces 10 September 2008 Pages: 1048 - 1054
Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers P. V. SeredinÉ. P. DomashevskayaI. S. Tarasov Semiconductor Structures, Interfaces, and Surfaces 10 September 2008 Pages: 1055 - 1061
Influence of electric field on the photoelectric effect in a Schottky barrier based on n-type cadmium diphosphide I. G. StamovD. V. Tkachenko Semiconductor Structures, Interfaces, and Surfaces 10 September 2008 Pages: 1062 - 1068
Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/Ga x In1 − x As y P1 − y /GaInP/GaAs(001) heterostructures E. P. DomashevskayaN. N. GordienkoI. S. Tarasov Semiconductor Structures, Interfaces, and Surfaces 10 September 2008 Pages: 1069 - 1075
Baric properties of InAs quantum dots B. V. NovikovG. G. ZegryaG. E. Cirlin Low-Dimensional Systems Open access 10 September 2008 Pages: 1076 - 1083
Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides I. S. Vasil’evskiĭG. B. GalievI. A. Subbotin Low-Dimensional Systems 10 September 2008 Pages: 1084 - 1091
Edge luminescence of ZnO nanorods on high-intensity optical excitation A. N. GruzintsevA. N. Red’kinC. Barthou Low-Dimensional Systems 10 September 2008 Pages: 1092 - 1097
Photoluminescence of GeSi/Si nanoclusters formed by sublimation molecular-beam epitaxy in GeH4 medium D. O. FilatovM. V. KruglovaS. A. Denisov Low-Dimensional Systems 10 September 2008 Pages: 1098 - 1103
Electron emission from multilayer ensembles of vertically coupled InAs quantum dots in an n-GaAs matrix A. A. GutkinP. N. BrunkovS. G. Konnikov Low-Dimensional Systems 10 September 2008 Pages: 1104 - 1107
Magneto-photoluminescence in a type-II broken-gap n-GaInAsSb/p-InAs heterojunction K. D. MoiseevM. P. MikhaĭlovaB. McCombe Low-Dimensional Systems 10 September 2008 Pages: 1108 - 1112
Vibrational spectroscopy of amorphous carbon modified with Pt V. I. Ivanov-OmskiĭT. K. ZvonarevaG. S. Frolova Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 10 September 2008 Pages: 1113 - 1116
Specific features of use of wide-gap semi-insulating materials for recording of nuclear radiation A. M. IvanovN. B. StrokanA. A. Lebedev Physics of Semiconductor Devices 10 September 2008 Pages: 1117 - 1121
Diffusion of implanted sodium in oxygen-containing silicon V. M. Korol’S. A. VedenyapinV. Ovchinnikov Fabrication, Treatment, and Testing of Materials and Structures 10 September 2008 Pages: 1122 - 1126
Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals G. A. KachurinS. G. CherkovaV. A. Volodin Fabrication, Treatment, and Testing of Materials and Structures 10 September 2008 Pages: 1127 - 1131