Abstract
The processes of phase formation are studied in a binary Bi-Te system using the kinematic electron diffraction technique. It is established that, in the case of both simultaneous and layer-by-layer deposition of bismuth and tellurium and irrespective of the order of their deposition, phases with compositions Bi2Te3 and BiTe are formed at the condensation plane in the amorphous and crystalline state, respectively. The amorphous Bi2Te3 phase is stable at room temperature and crystallizes at a temperature of 423 K. It is shown that ordering of the phase BiTe is not a consequence of atomic order of the structure; rather, it is caused by the real structure of the object (by blocks).
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Original Russian Text © K.M. Akhmedov, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 9, pp. 1025–1027.
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Akhmedov, K.M. Phase formation and phase transformations in Bi-Te films with nanoscale thickness. Semiconductors 42, 1009–1011 (2008). https://doi.org/10.1134/S1063782608090017
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DOI: https://doi.org/10.1134/S1063782608090017