Abstract
The effect of oxygen on diffusion of sodium implanted into silicon is studied for the first time in the temperature range from 500 to 850°C. A high-resistivity p-Si (ρ > 1 kΩ cm) grown by the Czochralski method in a magnetic field (mCz) with the oxygen concentration ∼3 × 1017 cm−3 was used. For comparison, we used silicon grown by the crucibleless floating zone method (fz). Temperature dependences of the effective diffusion coefficient of sodium in the mCz-Si and fz-Si crystals were determined and written as D mCz[cm2/s] = 1.12exp(−1.64 eV/kT) cm2/s and D fz[cm2/s] = 0.024exp(−1.29 eV/kT) cm2/s, respectively. It is assumed that larger values of diffusion parameters in oxygen-containing silicon are caused by formation of complex aggregates that contain sodium and oxygen atoms.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
V. M. Korol’, Phys. Status Solidi A 110, 9 (1988).
V. M. Korol’, A. V. Zastavnoĭ, and M. N. Belikova, Fiz. Tekh. Poluprovodn. 9, 1222 (1975) [Sov. Phys. Semicond. 9, 815 (1975)].
A. V. Zastavnoĭ, V. M. Korol’, A. N. Mikhalyeva, and V. D. Prozorovskiĭ, Fiz. Tekh. Poluprovodn. 13, 995 (1979).
B. I. Boltaks, Diffusion in Semiconductors (Fizmatgiz, Moscow, 1961; Academic Press, New York, 1963), Ch. 4, Sect. 4, p. 133.
W. M. Gibson et al., Can. J. Phys. 46, 765 (1968).
A. V. Zastavnoĭ, V. M. Korol’, and P. B. Orlov, Poverkhnost’, Rentgen, Sinkhrotron. Neĭtron. Issled. 8, 70 (1999).
A. V. Zastavnoĭ, V. M. Korol’, and E. I. Ustinova, Fiz. Tekh. Poluprovodn. 17, 1696 (1983) [Semiconductors 17, 580 (1983)].
A. V. Zastavnoĭ and V. M. Korol’, Fiz. Tekh. Poluprovodn. 19, 1284 (1985) [Semiconductors 19, 785 (1985)].
A. V. Zastavnoĭ and V. M. Korol’, Phys. Status Solidi A 113, 227 (1989).
E. Frertwurst, J. Adey, A. Al-Ajili, et al., Nucl. Instrum Methods Phys. Res. A 552, 7 (2005).
C. A. Londos, M. R. Binns, A. R. Brown, et al., Appl. Phys. Lett. 62, 1525 (1993).
V. M. Korol’ and A. V. Zastavnoĭ, Poverkhnost’, Rentgen, Sinkhrotron. Neĭtron. Issled. 5, 74 (2001).
M. N. Belikova, A. V. Zastavnoĭ, and V. M. Korol’, Fiz. Tekh. Poluprovodn. 10, 535 (1976) [Sov. Phys. Semicond. 10, 319 (1976)].
E. M. Pell, Phys. Rev. 119, 1222 (1960).
E. M. Pell, J. Appl. Phys. 32, 1048 (1961).
V. Milman, M. C. Payne, V. Heine, et al., Phys. Rev. Lett. 70, 2928 (1993).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.M. Korol’, S.A. Vedenyapin, A.V. Zastavnoĭ, V. Ovchinnikov, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 9, pp. 1140–1144.
Rights and permissions
About this article
Cite this article
Korol’, V.M., Vedenyapin, S.A., Zastavnoĭ, A.V. et al. Diffusion of implanted sodium in oxygen-containing silicon. Semiconductors 42, 1122–1126 (2008). https://doi.org/10.1134/S1063782608090212
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782608090212