Abstract
The process of low-temperature relaxation of excited states of Group V donors in silicon due to coupling of electrons bound at Coulomb centers with intervalley phonons is analyzed. The rate of transitions from the 2p 0 state to the group of 1s(E, T 2) states with emission of the intervalley acoustic phonons LA-g and TA-f is calculated for the phosphorus, antimony, arsenic, and bismuth donors. It is shown that the TA-f phonons make a substantial contribution to nonradiative decay of the 2p 0 state that controls the stimulated infrared emission of the phosphorus and antimony donors in silicon.
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Original Russian Text © V.V. Tsyplenkov, E.V. Demidov, K.A. Kovalevsky, V.N. Shastin, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 9, pp. 1032–1038.
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Tsyplenkov, V.V., Demidov, E.V., Kovalevsky, K.A. et al. Relaxation of excited donor states in silicon with emission of intervalley phonons. Semiconductors 42, 1016–1022 (2008). https://doi.org/10.1134/S1063782608090030
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DOI: https://doi.org/10.1134/S1063782608090030