Abstract
The effect of magnetic field on the current-voltage characteristic of the n-GaAs-p-Ge heterojunction is studied at 77 and 300 K. A slight variation in the forward and reverse currents of the heterojunction in a magnetic field is observed. It is established that the observed variation in currents of the heterojunction is mainly caused by variation in the potential barrier as a result of a change in the concentration of minority charge carriers as induced by a magnetic field. It is found that the voltage magnetosensitivity of the heterojunction is lower by an order of magnitude than the voltage magnetosensitivity of a germanium magnetodiode.
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Original Russian Text © M.M. Gadjialiev, Z.Sh. Pirmagomedov, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 9, pp. 1050–1052.
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Gadjialiev, M.M., Pirmagomedov, Z.S. Effect of magnetic field on the current-voltage characteristic of the n-GaAs-p-Ge heterojunction. Semiconductors 42, 1034–1036 (2008). https://doi.org/10.1134/S1063782608090066
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DOI: https://doi.org/10.1134/S1063782608090066