Abstract
In the context of the deformation potential model, baric dependences of the energy structure of InAs quantum dots in a GaAs matrix are calculated. Under the assumption of the absence of interaction between the spherical quantum dots of identical sizes, the energy dependence of the baric coefficient of energy of the radiative transition in the quantum dot is determined. A similar dependence is also found experimentally in the photoluminescence spectra under uniform compression of the InAs/GaAs structures. Qualitative agreement between the theory and experiment as well as possible causes for their quantitative difference are discussed. It is concluded that such factors as the size dispersion, Coulomb interaction of charge carriers, and tunnel interaction of quantum dots contribute to this difference.
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Original Russian Text © B.V. Novikov, G.G. Zegrya, R.M. Peleshchak, O.O. Dan’kiv, V.A. Gaisin, V.G. Talalaev, I.V. Shtrom, G.E. Cirlin, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 9, pp. 1094–1101.
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Novikov, B.V., Zegrya, G.G., Peleshchak, R.M. et al. Baric properties of InAs quantum dots. Semiconductors 42, 1076–1083 (2008). https://doi.org/10.1134/S1063782608090133
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DOI: https://doi.org/10.1134/S1063782608090133