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Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

The effect of the thickness of embedded InAs and GaAs layers on the infrared reflection spectra of lattice vibrations for AlInAs/InAs/AlInAs, InGaAs/GaAs/InGaAs, and AlInAs/InGaAs/GaAs/InGaAs/AlInAs multilayer epitaxial heterostructures grown by MOC hydride epitaxy on InP (100) substrates is studied. Relative stresses emerging in the layers surrounding the embedded layers with variation in the number of monolayers from which the quantum dots are formed and with variation the thickness of the layers themselves surrounding the embedded layers are evaluated.

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References

  1. A. Madhukar et al., Appl. Phys. Lett. 64, 2727 (1994).

    Article  ADS  Google Scholar 

  2. F. Hatami et al., Appl. Phys. Lett. 67, 656 (1995).

    Article  ADS  Google Scholar 

  3. D. A. Vinokurov, V. A. Kapitonov, D. N. Nikolaev, et al., Fiz. Tekh. Poluprovodn. 35, 242 (2001) [Semiconductors 35, 235 (2001)].

    Google Scholar 

  4. E. P. Domashevskaya, P. V. Seredin, et al., Surf. Interface Anal. 38, 4 (2006).

    Google Scholar 

  5. Yu. I. Ukhanov, Optical Properties of Semiconductors (Nauka, Moscow, 1977) [in Russian].

    Google Scholar 

  6. W. G. Spitzer, D. Kleiman, and D. Walsh, Phys. Rev. 113, 1 (1959).

    Article  Google Scholar 

  7. H. W. Verleur, J. Opt. Soc. Am. 58, 1356 (1968).

    Article  ADS  Google Scholar 

  8. S. P. Kozyrev, Fiz. Tekh. Poluprovodn. 36, 3008 (1994) [Semiconductors 36, 1601 (1994)].

    Google Scholar 

  9. W. A. Harrison, Electronic Structure and the Properties of Solids, Ed. by W. H. Freeman (San Francisco, 1980).

  10. Yu. A. Goldberg, in Handbook Series on Semiconductor Parameters, Ed. by M. Levinshtein, S. Rumyantsev, and M. Shur (World Sci., London, 1999), Vol. 2, p. 1.

    Google Scholar 

  11. Characteristics of New Semiconductor Materials, http://www.ioffe.ru/SVA/NSM/Semi-cond/AlGaAs/basic.html.

  12. U. Pusep et al., Pis’ma Zh. Éksp. Teor. Fiz. 52, 9 (1991).

    Google Scholar 

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Authors and Affiliations

  1. Voronezh State University, Universitetskaya pl. 1, Voronezh, 394893, Russia

    P. V. Seredin, É. P. Domashevskaya & A. N. Lukin

  2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    I. N. Arsent’ev, D. A. Vinokurov & I. S. Tarasov

Authors
  1. P. V. Seredin
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  2. É. P. Domashevskaya
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  3. A. N. Lukin
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  4. I. N. Arsent’ev
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  5. D. A. Vinokurov
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  6. I. S. Tarasov
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Corresponding author

Correspondence to P. V. Seredin.

Additional information

Original Russian Text © P.V. Seredin, É.P. Domashevskaya, A.N. Lukin, I.N. Arsent’ev, D.A. Vinokurov, I.S. Tarasov, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 9, pp. 1072–1078.

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Seredin, P.V., Domashevskaya, É.P., Lukin, A.N. et al. Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers. Semiconductors 42, 1055–1061 (2008). https://doi.org/10.1134/S1063782608090108

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  • DOI: https://doi.org/10.1134/S1063782608090108

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