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Relaxation processes in conductivity of Cd1 − x Mn x Te crystals (0.02 < x < 0.55)

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Abstract

The results of studying the temperature dependences of resistivity and the Hall coefficient in crystals of Cd1 − x Mn x Te alloys (0.02 < x < 0.55) are used to gain insight into the conductivity relaxation processes observed in the temperature range 200–420 K in Cd1 − x Mn x Te crystals with the manganese content x > 0.06. An anomalous isothermal variation in the hole concentration by an amount from half to three orders of magnitude occurs in these crystals. It is shown that relaxation of resistivity in the crystals under consideration can be provided by quasi-chemical reactions with involvement of uncontrolled Cu impurity and defects of CdTe crystal structure.

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Authors and Affiliations

  1. National University of Water Management and Conservation, Rivne, 33014, Ukraine

    E. S. Nikonyuk, M. I. Kuchma & V. L. Shlyakhovyĭ

  2. Fed’kovich National University, Chernivtsi, 58012, Ukraine

    Z. I. Zakharuk, A. I. Rarenko & I. M. Yuriychuk

Authors
  1. E. S. Nikonyuk
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  2. Z. I. Zakharuk
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  3. M. I. Kuchma
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  4. V. L. Shlyakhovyĭ
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  5. A. I. Rarenko
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  6. I. M. Yuriychuk
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Corresponding author

Correspondence to E. S. Nikonyuk.

Additional information

Original Russian Text © E.S. Nikonyuk, Z.I. Zakharuk, M.I. Kuchma, V.L. Shlyakhovyĭ, A.I. Rarenko, I.M. Yuriychuk, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 9, pp. 1028–1031.

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Nikonyuk, E.S., Zakharuk, Z.I., Kuchma, M.I. et al. Relaxation processes in conductivity of Cd1 − x Mn x Te crystals (0.02 < x < 0.55). Semiconductors 42, 1012–1015 (2008). https://doi.org/10.1134/S1063782608090029

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  • DOI: https://doi.org/10.1134/S1063782608090029

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