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Electron emission from multilayer ensembles of vertically coupled InAs quantum dots in an n-GaAs matrix

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Abstract

Electron emission from multilayer arrays of vertically coupled InAs quantum dots into the n-GaAs matrix in Schottky-barrier structures (electron concentration n ≈ 2 × 1016 cm−3) is studied by admittance spectroscopy. It is established that, in the temperature region below ∼70 K, electron emission in a rate range of 3 × 104–3 × 106 s−1 proceeds via thermally activated tunneling through intermediate virtual states. As the number of layers in the quantum dot array increases from three to ten, a decrease in the electron emission rate is observed.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    A. A. Gutkin, P. N. Brunkov & S. G. Konnikov

  2. St. Petersburg Physics and Technology Centre for Research and Education, Russian Academy of Sciences, ul. Khlopina 8, korp. 3, St. Petersburg, 195220, Russia

    A. Yu. Egorov & A. E. Zhukov

Authors
  1. A. A. Gutkin
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  2. P. N. Brunkov
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  3. A. Yu. Egorov
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  4. A. E. Zhukov
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  5. S. G. Konnikov
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Correspondence to A. A. Gutkin.

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Original Russian Text © A.A. Gutkin, P.N. Brunkov, A.Yu. Egorov, A.E. Zhukov, S.G. Konnikov, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 9, pp. 1122–1125.

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Gutkin, A.A., Brunkov, P.N., Egorov, A.Y. et al. Electron emission from multilayer ensembles of vertically coupled InAs quantum dots in an n-GaAs matrix. Semiconductors 42, 1104–1107 (2008). https://doi.org/10.1134/S1063782608090170

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  • DOI: https://doi.org/10.1134/S1063782608090170

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