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Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides

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Abstract

The pseudomorphic AlGaAs/InGaAs/AlGaAs heterostructure δ-doped with silicon on both sides and used for fabrication of high-power transistors is optimized to obtain a high concentration n s and mobility of two-dimensional electron gas in the quantum well (n s ≈ 3 × 1012 cm−2). Electrical and structural characteristics of the samples grown by molecular-beam epitaxy with various doping levels are studied. It is shown that the mobility and concentration of electrons varies as doping level is increased and the subbands of dimensional quantization are sequentially filled. In order to analyze the distribution of electrons in subbands of the heterostructure, the Shubnikov-de Haas oscillations at the liquid helium temperature were studied. The quality of the heterostructure layers was assessed using the method of X-ray diffraction. The data of photoluminescence spectroscopy are in good agreement with the results of calculations of the band structure.

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Authors and Affiliations

  1. Institute of UHF Semiconductor Electronics, Russian Academy of Sciences, Moscow, 117105, Russia

    I. S. Vasil’evskiĭ, G. B. Galiev, E. A. Klimov, V. G. Mokerov & S. S. Shirokov

  2. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, 119333, Russia

    R. M. Imamov & I. A. Subbotin

Authors
  1. I. S. Vasil’evskiĭ
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  2. G. B. Galiev
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  3. E. A. Klimov
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  4. V. G. Mokerov
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  5. S. S. Shirokov
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  6. R. M. Imamov
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  7. I. A. Subbotin
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Correspondence to I. S. Vasil’evskiĭ.

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Original Russian Text © I.S. Vasil’evskiĭ, G.B. Galiev, E.A. Klimov, V.G. Mokerov, S.S. Shirokov, R.M. Imamov, I.A. Subbotin, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 9, pp. 1102–1109.

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Vasil’evskiĭ, I.S., Galiev, G.B., Klimov, E.A. et al. Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides. Semiconductors 42, 1084–1091 (2008). https://doi.org/10.1134/S1063782608090145

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  • DOI: https://doi.org/10.1134/S1063782608090145

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