Abstract
Variations in microhardness and impurity composition of surface layers in silicon crystals caused by a magnetic field are observed. It is assumed that the mechanism of slow structural relaxation in silicon crystals is related to an increase in the adsorption function of silicon as a result of the effect of a magnetic field; this mechanism underlies the magnetomechanical effect (the effect of variation in microhardness).
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Original Russian Text © V.A. Makara, M.A. Vasiliev, L.P. Steblenko, O.V. Koplak, A.N. Kurilyuk, Yu.L. Kobzar’, S.N. Naumenko, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 9, pp. 1061–1064.
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Makara, V.A., Vasiliev, M.A., Steblenko, L.P. et al. Variations in the impurity composition and microhardness of surface layers in silicon crystals caused by a magnetic field. Semiconductors 42, 1044–1047 (2008). https://doi.org/10.1134/S106378260809008X
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DOI: https://doi.org/10.1134/S106378260809008X