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Influence of electric field on the photoelectric effect in a Schottky barrier based on n-type cadmium diphosphide

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

The results of a study on photoelectric properties of a Schottky barrier based on n-type CdP2 are considered. The effect of the barrier electric field on photocurrents caused by photoelectron emission from metal and optical generation of excess charge carriers in the semiconductor was studied. It was found that the dependence of the photocurrent on the light-modulation frequency is controlled by level recharging times at the interfaces between the space-charge and quasi-neutrality regions and between semiconductor and metal. Good agreement between the calculated and experimental results was achieved.

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Authors and Affiliations

  1. Dniester State University, Tiraspol, 3300, Moldova

    I. G. Stamov & D. V. Tkachenko

Authors
  1. I. G. Stamov
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  2. D. V. Tkachenko
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Correspondence to I. G. Stamov.

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Original Russian Text © I.G. Stamov, D.V. Tkachenko, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 9, pp. 1079–1085.

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Stamov, I.G., Tkachenko, D.V. Influence of electric field on the photoelectric effect in a Schottky barrier based on n-type cadmium diphosphide. Semiconductors 42, 1062–1068 (2008). https://doi.org/10.1134/S106378260809011X

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  • DOI: https://doi.org/10.1134/S106378260809011X

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