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Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/Ga x In1 − x As y P1 − y /GaInP/GaAs(001) heterostructures

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Abstract

Structural and optical properties of two- and three-layer epitaxial heterostructures containing GaInP/Ga x In1 − x As y P1 − y quaternary alloy layers were studied. Domain formation due to spinodal decomposition of the quaternary alloy was detected in three-layer heterostructures. As a result, an additional long-wavelength band appears in the photoluminescence spectra, and an additional doublet of the \( CuK_{\alpha _{1,2} } \) line appears in X-ray diffraction patterns of the (006) line. The domain composition was determined on the basis of Vegard’s law and the Kouphal equation.

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Authors and Affiliations

  1. Voronezh State University, Universitetskaya pl. 1, Voronezh, 394006, Russia

    E. P. Domashevskaya, N. N. Gordienko, N. A. Rumyantseva, B. L. Agapov, P. V. Seredin & L. A. Bityutskaya

  2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    I. N. Arsent’ev, L. S. Vavilova & I. S. Tarasov

Authors
  1. E. P. Domashevskaya
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  2. N. N. Gordienko
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  3. N. A. Rumyantseva
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  4. B. L. Agapov
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  5. P. V. Seredin
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  6. L. A. Bityutskaya
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  7. I. N. Arsent’ev
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  8. L. S. Vavilova
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  9. I. S. Tarasov
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Corresponding author

Correspondence to E. P. Domashevskaya.

Additional information

Original Russian Text © E.P. Domashevskaya, N.N. Gordienko, N.A. Rumyantseva, B.L. Agapov, P.V. Seredin, L.A. Bityutskaya, I.N. Arsent’ev, L.S. Vavilova, I.S. Tarasov, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 9, pp. 1086–1093.

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Domashevskaya, E.P., Gordienko, N.N., Rumyantseva, N.A. et al. Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/Ga x In1 − x As y P1 − y /GaInP/GaAs(001) heterostructures. Semiconductors 42, 1069–1075 (2008). https://doi.org/10.1134/S1063782608090121

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  • DOI: https://doi.org/10.1134/S1063782608090121

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