Lattice vibrations of Zn1 − x Cd x Se semiconductor alloy in the two-mode and percolation models of rearrangement of the vibrational spectrum with the composition S. P. Kozyrev Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 09 October 2014 Pages: 1261 - 1266
On the band gap and thermal expansion of MnIn5.0S8.5 single crystals I. V. Bodnar Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 09 October 2014 Pages: 1267 - 1270
Effect of deviations from the stoichiometric composition on the electrical and photoelectrical properties of the Hg3In2Te6 compound O. G. GrushkaA. I. SavchukV. V. Shlemkevych Electronic Properties of Semiconductors 09 October 2014 Pages: 1271 - 1274
“Exciton” photoconductivity in GaAs crystals N. S. AverkievD. A. ZaitsevR. P. Seisyan Electronic Properties of Semiconductors 09 October 2014 Pages: 1275 - 1280
Electron structure and charge-carrier effective masses in In x Ga1 − x N (x = 0.25, 0.5, and 0.75) cubic systems V. V. IlyasovI. V. ErshovT. P. Zhdanova Electronic Properties of Semiconductors 09 October 2014 Pages: 1281 - 1286
Effect of temperature on the thermodynamic density of states in a quantizing magnetic field G. GulyamovU. I. ErkaboevN. Yu. Sharibaev Electronic Properties of Semiconductors 09 October 2014 Pages: 1287 - 1292
Comparison of the radiation hardness of silicon and silicon carbide A. A. LebedevV. V. Kozlovski Electronic Properties of Semiconductors 09 October 2014 Pages: 1293 - 1295
Determination of the structural and optical characteristics of Cu2ZnSnS4 semiconductor thin films A. U. ShelegV. G. HurtavyR. Caballero Surfaces, Interfaces, and Thin Films 09 October 2014 Pages: 1296 - 1302
Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose I. E. TyschenkoV. A. VolodinV. P. Popov Surfaces, Interfaces, and Thin Films 09 October 2014 Pages: 1303 - 1307
Mechanism of current flow in a Au-Ti-Al-Ti-n +-GaN ohmic contact in the temperature range of 4.2–300 K A. V. SachenkoA. E. BelyaevA. S. Pilipchuk Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 09 October 2014 Pages: 1308 - 1311
Quantum corrections to threshold voltages for fully depleted SOI transistors with two independent gates V. P. PopovM. A. IlnitskyA. N. Nazarov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 09 October 2014 Pages: 1312 - 1317
Enhancement of low temperature electron mobility due to an electric field in an InGaAs/InAlAs double quantum well structure T. SahuS. PaloN. Sahoo Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 09 October 2014 Pages: 1318 - 1323
Effective Hamiltonians for heterostructures based on direct-gap III–V semiconductors. The kp perturbation theory and the method of invariants G. F. GlinskiiM. S. Mironova Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 09 October 2014 Pages: 1324 - 1334
Charge transport in Si-SiO2 and Si-TiO2 nanocomposite structures Yu. S. MilovanovG. V. KuznetsovS. M. Stupan Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 09 October 2014 Pages: 1335 - 1341
On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures N. A. PikhtinA. V. LyutetskiyI. S. Tarasov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 09 October 2014 Pages: 1342 - 1347
Extremely short electromagnetic pulse in a superlattice taking into account field inhomogeneity along its axis E. G. FedorovN. N. KonobeevaM. B. Belonenko Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 09 October 2014 Pages: 1348 - 1352
Specific features of preparation of dense ceramic based on barium zirconate Yu. G. LyagaevaD. A. MedvedevN. M. Porotnikova Amorphous, Vitreous, and Organic Semiconductors 09 October 2014 Pages: 1353 - 1358
P-InAsSbP/n 0-InAs/n +-InAs photodiodes for operation at moderate cooling (150–220 K) P. N. BrunkovN. D. Il’inskayaN. M. Stus Physics of Semiconductor Devices 09 October 2014 Pages: 1359 - 1362
Injection photodiode based on a p-Si-n-CdS-n +-CdS structure Sh. A. MirsagatovI. B. Sapayev Physics of Semiconductor Devices 09 October 2014 Pages: 1363 - 1369
Photoelectric and photovoltaic properties of structures based on mesoporous silicon passivated with iron D. I. BilenkoV. V. GalushkaE. I. Khasina Physics of Semiconductor Devices 09 October 2014 Pages: 1370 - 1373
Planar light-emitting microcavities based on hydrogenated amorphous silicon carbide A. V. MedvedevN. A. FeoktistovV. G. Golubev Physics of Semiconductor Devices 09 October 2014 Pages: 1374 - 1380
p +-Si/nano-SiO2/n +-Si capacitor-based tunnel diode with negative differential resistance and a quartz resonator G. G. KarevaM. I. Vexler Physics of Semiconductor Devices 09 October 2014 Pages: 1381 - 1384
The performance of alloyed (CdS0.33Se0.67) quantum dots-sensitized TiO2 solar cell S. Abdallah Physics of Semiconductor Devices 09 October 2014 Pages: 1385 - 1390
Study of the relaxation of the excess current in silicon Schottky diodes I. G. Pashaev Physics of Semiconductor Devices 09 October 2014 Pages: 1391 - 1394
p-ZnO nanowires—A promising material for the fabrication of vacuum pressure sensors V. B. KapustianykM. R. PanasyukR. Ya. Serkiz Physics of Semiconductor Devices 09 October 2014 Pages: 1395 - 1398
Electroluminescence properties of a whispering-gallery-mode laser with coupled disk cavities A. N. ImenkovE. A. GrebenshchikovaYu. P. Yakovlev Physics of Semiconductor Devices 09 October 2014 Pages: 1399 - 1403