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Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose

  • Surfaces, Interfaces, and Thin Films
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Abstract

The properties of silicon-on-insulator films implanted with high hydrogen-ion doses (∼50 at %) and annealed under a pressure of 10.5 kbar are studied using the Raman scattering (RS) method. A high degree of optical-phonon localization is detected in the films under study, which is retained to an annealing temperature of ∼1000°C and is explained by the formation of silicon nanocrystals. It is found that the activation energy of annealing of the structural relaxation of dangling bonds in films with a high hydrogen content is independent of the annealing pressure. The activation energy of growth of the crystalline phase, calculated from RS spectra is ∼1.5 eV and is independent of pressure. The effect of hydrostatic pressure consists only in a decrease in the frequency factor limiting Si-Si bond relaxation during ordering.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090, Russia

    I. E. Tyschenko, V. A. Volodin & V. P. Popov

  2. Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia

    V. A. Volodin

  3. St Petersburg State Polytechnical University, ul. Polytekhnicheskaya 29, St. Petersburg, 194251, Russia

    V. V. Kozlovski

Authors
  1. I. E. Tyschenko
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  2. V. A. Volodin
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  3. V. V. Kozlovski
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  4. V. P. Popov
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Corresponding author

Correspondence to I. E. Tyschenko.

Additional information

Original Russian Text © I.E. Tyschenko, V.A. Volodin, V.V. Kozlovski, V.P. Popov, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 10, pp. 1339–1343.

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Tyschenko, I.E., Volodin, V.A., Kozlovski, V.V. et al. Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose. Semiconductors 48, 1303–1307 (2014). https://doi.org/10.1134/S1063782614100285

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  • DOI: https://doi.org/10.1134/S1063782614100285

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