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Study of the relaxation of the excess current in silicon Schottky diodes

  • Physics of Semiconductor Devices
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Abstract

This study is devoted to investigation of the relaxation of excess current in silicon α-NiTi-n-Si Schottky diodes subjected to either γ-ray radiation or local disturbance of the interface structure using a diamond indenter. A decrease in the excess diode current is attained using both thermal annealing and ultra-sound irradiation. Simultaneously, the parameters of solar cells manufactured from the above-mentioned Schottky diodes subjected to irradiation with γ-ray photons and to single or double irradiation with ultra-sound are studied. It is shown that, after the effect of the diamond indenter, the excess current decreases as a result of thermal annealing; however, a decrease in the excess current to the initial value is not attained. The photoelectric parameters of the studied solar cells before irradiation and after irradiation with γ-ray photons and after single or double irradiation with ultrasound show that ultrasonic treatment is more efficient than thermal annealing.

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Authors and Affiliations

  1. Baku State University, AZ-1148, Baku, Azerbaijan

    I. G. Pashaev

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  1. I. G. Pashaev
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Correspondence to I. G. Pashaev.

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Original Russian Text © I.G. Pashaev, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 10, pp. 1426–1429.

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Pashaev, I.G. Study of the relaxation of the excess current in silicon Schottky diodes. Semiconductors 48, 1391–1394 (2014). https://doi.org/10.1134/S1063782614100224

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  • DOI: https://doi.org/10.1134/S1063782614100224

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