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p +-Si/nano-SiO2/n +-Si capacitor-based tunnel diode with negative differential resistance and a quartz resonator

  • Physics of Semiconductor Devices
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Abstract

To demonstrate the extending functionality of the simplest MOS (metal-oxide-semiconductor) capacitor, a structure with a p +-Si/nano-SiO2 heterojunction in which strongly degenerate n +-Si is used instead of a metal electrode is considered. As a result, a tunnel diode with negative differential resistance and a quartz resonator is obtained. Its electrical characteristics are superior to those of the corresponding Esaki diode and are controlled not only by the Silicon doping level, but also by the SiO2 thickness.

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Authors and Affiliations

  1. Faculty of Physics, Saint Petersburg State University, Ul’yanovskaya Str. 3, St. Petersburg, 198904, Russia

    G. G. Kareva

  2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya Str. 26, St. Petersburg, 194021, Russia

    M. I. Vexler

Authors
  1. G. G. Kareva
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  2. M. I. Vexler
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Correspondence to G. G. Kareva.

Additional information

Original Russian Text © G.G. Kareva, M.I. Vexler, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 10, pp. 1416–1420.

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Kareva, G.G., Vexler, M.I. p +-Si/nano-SiO2/n +-Si capacitor-based tunnel diode with negative differential resistance and a quartz resonator. Semiconductors 48, 1381–1384 (2014). https://doi.org/10.1134/S1063782614100145

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  • DOI: https://doi.org/10.1134/S1063782614100145

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