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On the band gap and thermal expansion of MnIn5.0S8.5 single crystals

  • Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
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Abstract

MnIn5.0S8.5 single crystals are grown by the Bridgman method. The width and length of the crystals are ∼14 and ∼40 mm, respectively. The composition, structure and unit-cell parameter of the crystals are established. From the transmittance spectra recorded in the temperature range 20–300 K, the band gap E g and its temperature dependence E g (T) are determined. The dependence E g (T) is adequately described by the corresponding theoretical expression. The specific expansion (Δl/l 0) versus temperature is measured, and the coefficient of linear thermal expansion (α L ) is determined. From the data on α L , the Debye temperature (ΘD) and the rms dynamic atomic displacements \((\sqrt {\bar u^2 } )\) are calculated. It is established that the Debye temperature ΘD decreases with increasing temperature, whereas the rms atomic displacements increase.

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Authors and Affiliations

  1. Belarussian State University of Information and Radio Electronics, Minsk, 220013, Belarus

    I. V. Bodnar

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  1. I. V. Bodnar
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Correspondence to I. V. Bodnar.

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Original Russian Text © I.V. Bodnar, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 10, pp. 1303–1306.

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Bodnar, I.V. On the band gap and thermal expansion of MnIn5.0S8.5 single crystals. Semiconductors 48, 1267–1270 (2014). https://doi.org/10.1134/S1063782614100054

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  • DOI: https://doi.org/10.1134/S1063782614100054

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