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Enhancement of low temperature electron mobility due to an electric field in an InGaAs/InAlAs double quantum well structure

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

The effect of external electric field F on multisubband electron mobility μ in an In0.53Ga0.47As/In0.52Al48As double quantum well structure is analyzed. We consider scatterings due to ionized impurities, interface roughness and alloy disorder to analyze μ. The variation of scattering mechanisms as a function of F for different structure parameters shows interesting results through intersubband interactions. For small well widths, the mobility is governed by interface roughness scattering. When two subbands are occupied, the effect of impurity scattering gets enhanced through intersubband interactions. Our results of enhancement in mobility as a function of F, can be utilized for low temperature devices.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Science and Technology, Berhampur, 761 008, Odisha, India

    T. Sahu

  2. Department of ECE, Kalam Institute of Technology, Berhampur, Odisha, India

    S. Palo

  3. Department of ECE, SMIT, Berhampur, Odisha, India

    P. K. Nayak

  4. Department of Electronic Science, Berhampur University, Berhampur, 760007, India

    N. Sahoo

Authors
  1. T. Sahu
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  2. S. Palo
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  3. P. K. Nayak
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  4. N. Sahoo
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Correspondence to T. Sahu.

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Sahu, T., Palo, S., Nayak, P.K. et al. Enhancement of low temperature electron mobility due to an electric field in an InGaAs/InAlAs double quantum well structure. Semiconductors 48, 1318–1323 (2014). https://doi.org/10.1134/S1063782614100261

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  • DOI: https://doi.org/10.1134/S1063782614100261

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