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Charge transport in Si-SiO2 and Si-TiO2 nanocomposite structures

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

The experimental data on dispersed Si-SiO2 and Si-TiO2 nanocomposite structures different in terms of physical, chemical, and insulator properties of oxide components are reported. The parameters of the nanocomposite structures are studied by FTIR spectroscopy and impedance spectroscopy. It is shown that, in such structures, the mechanisms of charge-carrier transport are defined by the properties of Si nanocrystallites and the corresponding oxide as well as by interaction processes at interfaces between grains.

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Authors and Affiliations

  1. Institute of High Technologies, Taras Shevchenko National University of Kyiv, 64 Volodymyrska Str., 01601, Kyiv, Ukraine

    Yu. S. Milovanov, G. V. Kuznetsov, V. A. Skryshevsky & S. M. Stupan

Authors
  1. Yu. S. Milovanov
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  2. G. V. Kuznetsov
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  3. V. A. Skryshevsky
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  4. S. M. Stupan
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Correspondence to Yu. S. Milovanov.

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Original Russian Text © Yu.S. Milovanov, G.V. Kuznetsov, V.A. Skryshevsky, S.M. Stupan, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 10, pp. 1370–1376.

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Milovanov, Y.S., Kuznetsov, G.V., Skryshevsky, V.A. et al. Charge transport in Si-SiO2 and Si-TiO2 nanocomposite structures. Semiconductors 48, 1335–1341 (2014). https://doi.org/10.1134/S1063782614100200

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  • DOI: https://doi.org/10.1134/S1063782614100200

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