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P-InAsSbP/n 0-InAs/n +-InAs photodiodes for operation at moderate cooling (150–220 K)

  • Physics of Semiconductor Devices
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Abstract

InAs single hetero structure photodiodes were considered as alternatives to cooled CdHgTe-based detectors sensitive to radiation around 3 μm spectral region in a wide temperature range 77–300 K. Estimations of detectivity as well as p-n junction position in InAs heterostructures have been obtained via photoelectrical and AFM measurements.

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Authors and Affiliations

  1. Ioffe Institute, St. Petersburg, 194021, Russia

    P. N. Brunkov, N. D. Il’inskaya, S. A. Karandashev, A. A. Lavrov, B. A. Matveev, M. A. Remennyi & N. M. Stus

  2. National Research University of Information Technologies, Mechanics and Optics (ITMO), St. Petersburg, 197101, Russia

    P. N. Brunkov

  3. LETI Ul’yanov (Lenin) St. Petersburg Electrotechnical University, St. Petersburg, 197376, Russia

    N. M. Latnikova & E. N. Sevostyanov

  4. Electron National Research Institute, St. Petersburg, 194223, Russia

    A. S. Petrov

Authors
  1. P. N. Brunkov
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  2. N. D. Il’inskaya
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  3. S. A. Karandashev
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  4. N. M. Latnikova
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  5. A. A. Lavrov
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  6. B. A. Matveev
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  7. A. S. Petrov
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  8. M. A. Remennyi
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  9. E. N. Sevostyanov
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  10. N. M. Stus
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Corresponding author

Correspondence to B. A. Matveev.

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Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A. et al. P-InAsSbP/n 0-InAs/n +-InAs photodiodes for operation at moderate cooling (150–220 K). Semiconductors 48, 1359–1362 (2014). https://doi.org/10.1134/S1063782614100066

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  • DOI: https://doi.org/10.1134/S1063782614100066

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