Abstract
The temperature dependence of the contact resistivity ρ c (T) of Au-Ti-Al-Ti-n +-GaN ohmic contacts is studied experimentally and substantiated theoretically in the temperature range T = 4.2–300 K. It is shown that the saturation portion of ρ c (T) is observed in the low-temperature measurement region (4.2–50 K). As the temperature increases, ρ c decreases by the exponential law. The experimental and calculated dependences ρ c (T) are in agreement. The obtained results make it possible to conclude the field nature of the current transfer for the saturation region of ρ c (T) and the thermal-field one, for the exponential region.
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Original Russian Text © A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, R.V. Konakova, L.M. Kapitanchuk, V.N. Sheremet, Yu.N. Sveshnikov, A.S. Pilipchuk, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 10, pp. 1344–1347.
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Sachenko, A.V., Belyaev, A.E., Boltovets, N.S. et al. Mechanism of current flow in a Au-Ti-Al-Ti-n +-GaN ohmic contact in the temperature range of 4.2–300 K. Semiconductors 48, 1308–1311 (2014). https://doi.org/10.1134/S106378261410025X
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DOI: https://doi.org/10.1134/S106378261410025X