Negative luminescence and devices based on this phenomenon V. I. Ivanov-OmskiiB. A. Matveev Review Pages: 247 - 258
The shape of the signals of transient photoconductivity in silicon doped with gold or sulfur A. D. KiryukhinV. V. Grigor’evN. A. Korolev Electronic and Optical Properties of Semiconductors Pages: 259 - 262
A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum A. A. LebedevV. V. ZeleninR. Yakimova Electronic and Optical Properties of Semiconductors Pages: 263 - 265
The band structure and the double metal-insulator-metal phase transition in the conductivity of elastically strained zero-gap Cd x Hg1−x Te E. F. VengerS. G. Gasan-zadeG. A. Shepelskiĭ Electronic and Optical Properties of Semiconductors Pages: 266 - 271
Effect of energy-band bending on the thermopower in bipolar semiconductors A. Konin Electronic and Optical Properties of Semiconductors Pages: 272 - 276
Longitudinal autosoliton motion across p-InSb in a transverse magnetic field I. K. KamilovA. A. StepurenkoA. S. Kovalev Electronic and Optical Properties of Semiconductors Pages: 277 - 280
Quadratic recombination in silicon and its influence on the bulk lifetime A. V. SachenkoA. P. GorbanI. O. Sokolovskiĭ Electronic and Optical Properties of Semiconductors Pages: 281 - 284
Dislocation-related luminescence in silicon, caused by implantation of oxygen ions and subsequent annealing N. A. SobolevB. Ya. BerE. I. Shek Electronic and Optical Properties of Semiconductors Pages: 285 - 287
Electrical properties of n-ZnO/p-CuO heterostructures B. M. VermenichevO. L. LisitskiĭS. Zh. Tokmoldin Semiconductor Structures, Interfaces, and Surfaces Pages: 288 - 290
Behavior of germanium ion-implanted into SiO2 near the bonding interface of a silicon-on-insulator structure I. E. TyschenkoM. VoelskowV. P. Popov Semiconductor Structures, Interfaces, and Surfaces Pages: 291 - 296
Role of spontaneous polarization in formation of heterojunctions from silicon carbide polytypes S. Yu. DavydovA. A. LebedevA. V. Troshin Semiconductor Structures, Interfaces, and Surfaces Pages: 297 - 300
Effect of the buffer layer of GaSe intrinsic oxide with nanometer thickness on electrical, photoelectric, and emissive properties of ITO-GaSe heterostructures S. I. DrapakZ. D. Kovalyuk Semiconductor Structures, Interfaces, and Surfaces Pages: 301 - 306
Special features of the Fourier spectra of magnetoresistance oscillations in a heavily doped heterostructure V. I. Kadushkin Low-Dimensional Systems Pages: 307 - 313
A mathematical simulation of the effect of the bistability of current characteristics in nanosized multiple-layer heavily doped heterostructures V. A. Gergel’A. P. ZelenyiM. N. Yakupov Low-Dimensional Systems Pages: 314 - 319
Characterization of In x Ga1−x As/GaAs quantum-well heterostructures by C-V measurements: Band offsets, quantum-confinement levels, and wave functions V. I. Zubkov Low-Dimensional Systems Pages: 320 - 326
Resonance modulation of the intersubband electron-electron interaction in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well by magnetic field V. I. KadushkinYu. G. Sadof’evY. -H. Zhang Low-Dimensional Systems Pages: 327 - 334
Fractional differential kinetics of charge transport in unordered semiconductors R. T. SibatovV. V. Uchaikin Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites Pages: 335 - 340
Structure and electrical properties of polycrystalline SiGe films grown by molecular beam deposition I. B. ChistokhinA. K. GutakovskiĭA. S. Deryabin Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites Pages: 341 - 344
The effect of irradiation with high-energy protons on 4H-SiC detectors V. KažukauskasR. JasiulionisJ. -V. Vaitkus Physics of Semiconductor Devices Pages: 345 - 352
Measurement and comparison of complex impedance of silicon p-i-n photodiodes at different temperatures H. BayhanS. Ozden Physics of Semiconductor Devices Pages: 353 - 356
Increase in the electron mobility in the inversion channel of a Si-MOS transistor in the case of ion polarization of the gate oxide Yu. V. GulyaevA. G. ZhdanG. V. Chucheva Physics of Semiconductor Devices Pages: 357 - 360
Nonlinear-optical effects in semiconductor lasers based on InGaAs/GaAs/AlGaAs quantum-confinement heterostructures N. S. AverkievS. O. SlipchenkoI. S. Tarasov Physics of Semiconductor Devices Pages: 361 - 364