Abstract
The coefficient of nonradiative excitonic recombination by the Auger mechanism involving deep-level centers in n-Si was determined by comparing the theoretical dependence of the effective bulk lifetime on the doping level with the experimental dependence. It is shown that this mechanism controls the bulk lifetime in silicon at doping levels on the order of or above 1016 cm−3. This mechanism is more pronounced at shorter bulk lifetimes τ v0 and low doping levels. The dependences of the bipolar diffusion length in n-Si on the doping level (using the parameter τ v0) were calculated.
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Original Russian Text © A.V. Sachenko, A.P. Gorban, V.P. Kostylev, I.O. Sokolovskiĭ, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 3, pp. 290–294.
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Sachenko, A.V., Gorban, A.P., Kostylev, V.P. et al. Quadratic recombination in silicon and its influence on the bulk lifetime. Semiconductors 41, 281–284 (2007). https://doi.org/10.1134/S1063782607030074
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DOI: https://doi.org/10.1134/S1063782607030074