Abstract
Multiple implantation of oxygen ions with energies of 0.1–1.5 MeV at doses of 7 × 1013−2 × 1014 cm−2 and subsequent annealing in a chlorine-containing atmosphere at 900°C for 4 h give rise to dislocation-related luminescence in p-Si. A p → n conductivity-type conversion is also observed in this case in the surface layer of Si, which indicates that electrically active donor centers are formed in the process. Preliminary heat treatment of wafers covered with an erbium-doped film of tetraethoxysilane (TEOS) in argon at 1250°C for 1 h does not preclude the appearance of dislocation-related luminescence, but affects the parameters of the dislocation-related lines (peak positions and intensities).
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Original Russian Text © N.A. Sobolev, B.Ya. Ber, A.M. Emel’yanov, A.P. Kovarskiĭ, E.I. Shek, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 3, pp. 295–297.
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Sobolev, N.A., Ber, B.Y., Emel’yanov, A.M. et al. Dislocation-related luminescence in silicon, caused by implantation of oxygen ions and subsequent annealing. Semiconductors 41, 285–287 (2007). https://doi.org/10.1134/S1063782607030086
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DOI: https://doi.org/10.1134/S1063782607030086