Abstract
The structural and electrical properties of polycrystalline Si0.5Ge0.5 films 150 nm thick grown by molecular beam deposition at temperatures of 200–550°C on silicon substrates coated with amorphous layers of silicon oxynitride were studied. It is shown that the films consist of a mixture of amorphous and polycrystalline phases. The amorphous phase fraction decreases from ∼50% in films deposited at 200°C to zero in films grown at 550°C. Subsequent 1-h annealing at a temperature of 550°C results in complete solid-phase crystallization of all films. The electron transport of charge carriers in polycrystalline films occurs by the thermally activated mechanism associated with the energy barrier of ∼0.2 eV at grain boundaries. Barrier lowering upon additional annealing of SiGe films correlates with an increase in the average grain size.
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References
T. Ishikava, M. Ueno, K. Endo, et al., Proc. SPIE 3698, 556 (1999).
C. Chen, Y. Xinjian, X. Zhao, and B. Xiong, Sens. Actuators A 90, 212 (2001).
J. S. Shie and P. K. Weng, Sens. Actuators A 33, 182 (1992).
J. L. Tissot, F. Rothan, C. Vedel, et al., Proc. SPIE 3379, 139 (1998).
S. Sedky, P. Fiorini, M. Caymax, et al., Sens. Actuators A 66, 193 (1998).
L. Dong, R. Yue, and L. Liu, Sens. Actuators A 105, 286 (2003).
Polycrystalline and Amorphous Thin Films and Devices, Ed. by L. Kazmerski (Academic, New York, 1980; Mir, Moscow, 1983).
J. W. Tringle and J. D. Plummer, J. Appl. Phys. 87, 7913 (2000).
S. Sedky, P. Fiorini, K. Baert, et al., IEEE Trans. Electron Devices 46, 675 (1999).
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Original Russian Text © I.B. Chistokhin, A.K. Gutakovskiĭ, A.S. Deryabin, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 3, pp. 352–355.
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Chistokhin, I.B., Gutakovskiĭ, A.K. & Deryabin, A.S. Structure and electrical properties of polycrystalline SiGe films grown by molecular beam deposition. Semiconductors 41, 341–344 (2007). https://doi.org/10.1134/S1063782607030189
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DOI: https://doi.org/10.1134/S1063782607030189