Abstract
3C-SiC epitaxial layers with a thickness of up to 100 µm were grown on 6H-SiC hexagonal substrates by sublimation epitaxy in vacuum. The n-type epitaxial layers with the area in the range 0.3–0.5 cm2 and uncompensated donor concentration N d − N a ∼ (1017–1018) cm−3 were produced at maximum growth rates of up to 200 µm/h. An X-ray analysis demonstrated that the epitaxial layers are composed of the 3C-SiC polytype, without inclusions of other polytypes. The photoluminescence (PL) spectrum of the layers was found to be dominated by the donor-acceptor (Al-N) recombination band peaked at hv ≈ 2.12 eV. The PL spectrum measured at 6 K was analyzed in detail. It is concluded that the epitaxial layers obtained can serve as substrates for 3C-SiC-based electronic devices.
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Original Russian Text © A.A. Lebedev, V.V. Zelenin, P.L. Abramov, E.V. Bogdanova, S.P. Lebedev, D.K. Nel’son, B.S. Razbirin, M.P. Shcheglov, A.S. Tregubova, M. Suvajarvi, R. Yakimova, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 3, pp. 273–275.
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Lebedev, A.A., Zelenin, V.V., Abramov, P.L. et al. A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum. Semiconductors 41, 263–265 (2007). https://doi.org/10.1134/S1063782607030037
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DOI: https://doi.org/10.1134/S1063782607030037