Abstract
The theory of thermopower with regard to the real boundary conditions at the metal-semiconductor interface and surface energy-band bending in bipolar semiconductors is developed. It is shown that, for some values of the surface parameters and sample thickness, the surface potential can substantially affect the magnitude of the thermopower.
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Original Russian Text © A. Konin, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 3, pp. 282–285.