Abstract
The Fourier spectra of oscillations of magnetoresistance in the heavily doped Al x Ga1 − x As:Si/GaAs heterostructure, with filling of the two size-quantization subbands, the ground subband E m and the excited subband E p , are studied. In the concept of the probabilities of intrasubband and intersubband transitions involving the Landau levels, the origin of harmonics at the frequencies F m ± F p in the oscillations of magnetoresistance are interpreted. The ratio between the peak amplitudes A m and A p at the frequencies F m and F p of the harmonics is close to unity, with equal probabilities of the relations A m /A p > 1 and A m /A p < 1. At A m /A p > 1, the damping of the Landau quantization is controlled by the Coulomb potential, whereas at A m /A p < 1 it is controlled by relaxation of two-dimensional electrons due to the heterointerfacial roughness.
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Original Russian Text © V.I. Kadushkin, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 3, pp. 318–324.
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Kadushkin, V.I. Special features of the Fourier spectra of magnetoresistance oscillations in a heavily doped heterostructure. Semiconductors 41, 307–313 (2007). https://doi.org/10.1134/S106378260703013X
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DOI: https://doi.org/10.1134/S106378260703013X