Abstract
The amplitude-frequency modulation of oscillations of the magnetoresistance of 2D electrons in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well is studied. In the dependence of the amplitude of the oscillations δ(1/B) T = const, regions of negative Dingle temperature are observed. The anomalies in the dependence δ(1/B) T = const are attributed to the fact that the quantizing magnetic field resonantly induces intersubband electron-electron interaction between the 2D electrons of the ground size-quantization subband and excited subband. The resonance fields B and the times corresponding to the collision-related broadening of the Landau levels are estimated. The concentration threshold of filling of the excited size-quantization subband is established at a level of n s ≈ 8 × 1011 cm−2.
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Original Russian Text © V.I. Kadushkin, Yu.G. Sadof’ev, J.P. Bird, S.R. Johnson, Y.-H. Zhang, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 3, pp. 338–345.
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Kadushkin, V.I., Sadof’ev, Y.G., Bird, J.P. et al. Resonance modulation of the intersubband electron-electron interaction in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well by magnetic field. Semiconductors 41, 327–334 (2007). https://doi.org/10.1134/S1063782607030165
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DOI: https://doi.org/10.1134/S1063782607030165