Abstract
The n-ZnO/p-CuO heterostructure is prepared, and its I-V characteristic is measured. It is shown that the heterostructure conductivity is primarily determined by the CuO layer and the n-ZnO/p-CuO heterojunction itself.
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Original Russian Text © B.M. Vermenichev, O.L. Lisitskiĭ, M.E. Kumekov, S.E. Kumekov, E.I. Terukov, S.Zh. Tokmoldin, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 3, pp. 298–300.
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Vermenichev, B.M., Lisitskiĭ, O.L., Kumekov, M.E. et al. Electrical properties of n-ZnO/p-CuO heterostructures. Semiconductors 41, 288–290 (2007). https://doi.org/10.1134/S1063782607030098
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DOI: https://doi.org/10.1134/S1063782607030098