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Characterization of In x Ga1−x As/GaAs quantum-well heterostructures by C-V measurements: Band offsets, quantum-confinement levels, and wave functions

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Abstract

The method of C-V profiling combined with self-consistent solution of Schrödinger’s and Poisson’s equations was used to determine with high precision the absolute values of the conduction-band offsets, energies of quantum-confinement levels, and charge-carrier concentrations in quantum-confinement subbands of In x Ga1−x As/GaAs quantum-well heterostructures with In content corresponding to the pseudomorphic growth mode (0 < x < 0.3). A characterization technique based on capacitance measurements is developed, enabling one to determine the main electronic parameters of quantum-confinement heterostructures.

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Authors and Affiliations

  1. St. Petersburg State Electrotechnical University (LETI), St. Petersburg, 197376, Russia

    V. I. Zubkov

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  1. V. I. Zubkov
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Original Russian Text © V.I. Zubkov, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 3, pp. 331–337.

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Zubkov, V.I. Characterization of In x Ga1−x As/GaAs quantum-well heterostructures by C-V measurements: Band offsets, quantum-confinement levels, and wave functions. Semiconductors 41, 320–326 (2007). https://doi.org/10.1134/S1063782607030153

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  • DOI: https://doi.org/10.1134/S1063782607030153

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