Abstract
The effect of irradiation of 4H-SiC ionizing-radiation detectors with various doses (as high as 1016 cm−2) of 24-GeV protons is studied. Isotopes of B, Be, Li, He, and H were produced in the nuclear spallation reactions of protons with carbon. Isotopes of Al, Mg, Na, Ne, F, O, and N were produced in the reactions of protons with silicon. The total amount of the produced stable isotopes varied in proportion with the radiation dose from 1.2 × 1011 to 5.9 × 1013 cm−2. It is shown that, at high radiation doses, the contact characteristics of the detectors change appreciably. The potential-barrier height increased from the initial value of 0.7–0.75 eV to 0.85 eV; the rectifying characteristics of the Schottky contacts deteriorated appreciably. These effects are attributed to the formation of a disordered structure of the material as a result of irradiation.
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References
Yu. A. Goldberg, M. Levinshtein, and S. L. Rumyantsev, in Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe, Ed. by M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur (Wiley, New York, 2001), Chap. 5, p. 93.
A. Castaldini, A. Cavallini, L. Rigutti, et al., Mater. Res. Soc. Symp. Proc. 792, 611 (2004).
A. Castaldini, A. Cavallini, L. Rigutti, and F. Nava, Appl. Phys. Lett. 85, 3780 (2004).
Z.-Q. Fang, D. C. Look, A. Saxler, and W. C. Mitchel, Physica B (Amsterdam) 308–310, 706 (2001).
D. V. Davydov, A. A. Lebedev, V. V. Kozlovskii, et al., Physica B (Amsterdam) 308–310, 641 (2002).
S. Maximenko, S. Soloviev, D. Cherednichenko, and T. Sudarshan, Appl. Phys. Lett. 84, 1576 (2004).
M. Tajima, M. Tanaka, and N. Hoshino, Mater. Sci. Forum 389–393, 597 (2002).
N. E. Korsunska, I. Tarasov, V. Kushnirenko, and S. Ostapenko, Semicond. Sci. Technol. 19, 833 (2004).
R. Weingärtner, P. J. Wellmann, M. Bickermann, et al., Appl. Phys. Lett. 80, 70 (2002).
R. Stibal, S. Müller, W. Jantz, et al., Phys. Status Solidi C 0, 1013 (2003).
M. Mermoux, A. Crisci, and F. Baillet, Mater. Sci. Forum 433–436, 353 (2003).
S. Ostapenko, Yu. M. Suleimanov, I. Tarasov, et al., J. Phys.: Condens. Matter 14, 13 381 (2002).
Q. Li, A. Y. Polyakov, M. Skowronski, et al., J. Appl. Phys. 96, 411 (2004).
D. M. Martin, H. K. Nielsen, P. Leveque, et al., Appl. Phys. Lett. 84, 1704 (2004).
Y. Negoro, K. Katsumoto, T. Kimoto, and H. Matsunami, J. Appl. Phys. 96, 224 (2004).
L. Wang, J. Huang, X. Duo, et al., J. Phys. D: Appl. Phys. 33, 1551 (2000).
W. Cunningham, A. Gouldwell, G. Lamb, et al., J. Phys. D 34, 2748 (2001).
F. Nava, E. Vittone, P. Vanni, et al., Nucl. Instrum. Methods Phys. Res. A 514, 126 (2003).
W. Cunningham, J. Melone, M. Horn, et al., Nucl. Instrum. Methods Phys. Res. A 509, 127 (2003).
R. Jasiulionis and H. Wershofer, J. Environ. Radioact. 79, 157 (2005).
R. Silberger and C. H. Tsao, Astrophys. J., Suppl. Ser. 25, 315 (1973).
L. Silver, C. H. Tsao, R. Silberger, et al., Phys. Rev. C 47, 1225 (1993).
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Original Russian Text © V. Kažukauskas, R. Jasiulionis, V. Kalendra, J.-V. Vaitkus, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 3, pp. 356–363.
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Kažukauskas, V., Jasiulionis, R., Kalendra, V. et al. The effect of irradiation with high-energy protons on 4H-SiC detectors. Semiconductors 41, 345–352 (2007). https://doi.org/10.1134/S1063782607030190
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DOI: https://doi.org/10.1134/S1063782607030190