Abstract
Generation of a difference-frequency wave by two electromagnetic waves propagating in a heterolaser is analyzed theoretically. Calculations are carried out for InGaAs/GaAs/AlGaAs heterostructures of design optimized to attain maximum lasing power. It is shown that phase matching between the primary waves and the difference-frequency wave may persist over a distance of ∼1 mm, comparable to the cavity length (2–3 mm), and the conversion coefficient can be as large as several percent.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
V. G. Dmitriev and L. V. Tarasov, Applied Nonlinear Optics (Fizmatlit, Moscow, 2004) [in Russian].
Handbook of Physical Quantities, Ed. by I. S. Grigor’ev and E. Z. Meĭlikhov (Énergoatomizdat, Moscow, 1991; CRC Press, Boca Raton, N.Y., 1997).
Y. Kaneko, S. Nakagawa, Y. Ichimura, et al., J. Appl. Phys. 87, 1597 (2000).
T. Taniuchi and H. Nakanishi, J. Appl. Phys. 95, 7588 (2004).
V. Ya. Aleshkin, A. A. Afonenko, and N. B. Zvonkov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 1256 (2001) [Semiconductors 35, 1203 (2001)].
A. A. Afonenko, V. Ya. Aleshkin, and A. A. Dubinov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 244 (2004) [Semiconductors 38, 239 (2004)].
S. Hoffmann, M. Hofmann, M. Kira, and S. W. Koch, Semicond. Sci. Technol. 20, S205 (2005).
A. A. Afonenko, V. Ya. Aleshkin, and A. A. Dubinov, Semicond. Sci. Technol. 20, 357 (2005).
V. Ya. Aleshkin, B. N. Zvonkov, S. M. Nekorkin, and Vl. V. Kocharovskiĭ, Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 171 (2005) [Semiconductors 39, 156 (2005)].
S. O. Slipchenko, Z. N. Sokolova, N. A. Pikhtin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 40, 1017 (2006) [Semiconductors 40, 990 (2006)].
D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 388 (2005) [Semiconductors 39, 370 (2005)].
N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, et al., Electron. Lett. 40, 1413 (2004).
N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, and I. S. Tarasov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 374 (2004) [Semiconductors 38, 360 (2004)].
S. O. Slipchenko, D. A. Vinokurov, N. A. Pikhtin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 1477 (2004) [Semiconductors 38, 1430 (2004)].
A. I. Kovrighin, D. V. Yakovlev, B. V. Zhdanov, and N. I. Zheludev, Opt. Commun. 35, 92 (1980).
P. G. Eliseev, Introduction to the Physics of Injection Lasers (Nauka, Moscow, 1983) [in Russian].
R. F. Kazarinov, O. V. Konstantinov, V. I. Perel’, and A. L. Éfros, Fiz. Tverd. Tela (Leningrad) 7, 1506 (1965) [Sov. Phys. Solid State 7, 1210 (1965)].
Author information
Authors and Affiliations
Additional information
Original Russian Text © N.S. Averkiev, S.O. Slipchenko, Z.N. Sokolova, N.A. Pikhtin, I.S. Tarasov, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 3, pp. 372–375.
Rights and permissions
About this article
Cite this article
Averkiev, N.S., Slipchenko, S.O., Sokolova, Z.N. et al. Nonlinear-optical effects in semiconductor lasers based on InGaAs/GaAs/AlGaAs quantum-confinement heterostructures. Semiconductors 41, 361–364 (2007). https://doi.org/10.1134/S1063782607030220
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/S1063782607030220