1. Negative luminescence and devices based on this phenomenon

   • V. I. Ivanov-Omskii
   • B. A. Matveev

   Review Pages: 247 - 258

2. The shape of the signals of transient photoconductivity in silicon doped with gold or sulfur

   • A. D. Kiryukhin
   • V. V. Grigor’ev
   • N. A. Korolev

   Electronic and Optical Properties of Semiconductors Pages: 259 - 262

3. A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum

   • A. A. Lebedev
   • V. V. Zelenin
   • R. Yakimova

   Electronic and Optical Properties of Semiconductors Pages: 263 - 265

4. The band structure and the double metal-insulator-metal phase transition in the conductivity of elastically strained zero-gap Cd _x Hg_1−x Te

   • E. F. Venger
   • S. G. Gasan-zade
   • G. A. Shepelskiĭ

   Electronic and Optical Properties of Semiconductors Pages: 266 - 271

5. Effect of energy-band bending on the thermopower in bipolar semiconductors

   • A. Konin

   Electronic and Optical Properties of Semiconductors Pages: 272 - 276

6. Longitudinal autosoliton motion across p-InSb in a transverse magnetic field

   • I. K. Kamilov
   • A. A. Stepurenko
   • A. S. Kovalev

   Electronic and Optical Properties of Semiconductors Pages: 277 - 280

7. Quadratic recombination in silicon and its influence on the bulk lifetime

   • A. V. Sachenko
   • A. P. Gorban
   • I. O. Sokolovskiĭ

   Electronic and Optical Properties of Semiconductors Pages: 281 - 284

8. Dislocation-related luminescence in silicon, caused by implantation of oxygen ions and subsequent annealing

   • N. A. Sobolev
   • B. Ya. Ber
   • E. I. Shek

   Electronic and Optical Properties of Semiconductors Pages: 285 - 287

9. Electrical properties of n-ZnO/p-CuO heterostructures

   • B. M. Vermenichev
   • O. L. Lisitskiĭ
   • S. Zh. Tokmoldin

   Semiconductor Structures, Interfaces, and Surfaces Pages: 288 - 290

10. Behavior of germanium ion-implanted into SiO₂ near the bonding interface of a silicon-on-insulator structure

    • I. E. Tyschenko
    • M. Voelskow
    • V. P. Popov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 291 - 296

11. Role of spontaneous polarization in formation of heterojunctions from silicon carbide polytypes

    • S. Yu. Davydov
    • A. A. Lebedev
    • A. V. Troshin

    Semiconductor Structures, Interfaces, and Surfaces Pages: 297 - 300

12. Effect of the buffer layer of GaSe intrinsic oxide with nanometer thickness on electrical, photoelectric, and emissive properties of ITO-GaSe heterostructures

    • S. I. Drapak
    • Z. D. Kovalyuk

    Semiconductor Structures, Interfaces, and Surfaces Pages: 301 - 306

13. Special features of the Fourier spectra of magnetoresistance oscillations in a heavily doped heterostructure

    • V. I. Kadushkin

    Low-Dimensional Systems Pages: 307 - 313

14. A mathematical simulation of the effect of the bistability of current characteristics in nanosized multiple-layer heavily doped heterostructures

    • V. A. Gergel’
    • A. P. Zelenyi
    • M. N. Yakupov

    Low-Dimensional Systems Pages: 314 - 319

15. Characterization of In _x Ga_1−x As/GaAs quantum-well heterostructures by C-V measurements: Band offsets, quantum-confinement levels, and wave functions

    • V. I. Zubkov

    Low-Dimensional Systems Pages: 320 - 326

16. Resonance modulation of the intersubband electron-electron interaction in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well by magnetic field

    • V. I. Kadushkin
    • Yu. G. Sadof’ev
    • Y. -H. Zhang

    Low-Dimensional Systems Pages: 327 - 334

17. Fractional differential kinetics of charge transport in unordered semiconductors

    • R. T. Sibatov
    • V. V. Uchaikin

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites Pages: 335 - 340

18. Structure and electrical properties of polycrystalline SiGe films grown by molecular beam deposition

    • I. B. Chistokhin
    • A. K. Gutakovskiĭ
    • A. S. Deryabin

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites Pages: 341 - 344

19. The effect of irradiation with high-energy protons on 4H-SiC detectors

    • V. Kažukauskas
    • R. Jasiulionis
    • J. -V. Vaitkus

    Physics of Semiconductor Devices Pages: 345 - 352

20. Measurement and comparison of complex impedance of silicon p-i-n photodiodes at different temperatures

    • H. Bayhan
    • S. Ozden

    Physics of Semiconductor Devices Pages: 353 - 356

21. Increase in the electron mobility in the inversion channel of a Si-MOS transistor in the case of ion polarization of the gate oxide

    • Yu. V. Gulyaev
    • A. G. Zhdan
    • G. V. Chucheva

    Physics of Semiconductor Devices Pages: 357 - 360

22. Nonlinear-optical effects in semiconductor lasers based on InGaAs/GaAs/AlGaAs quantum-confinement heterostructures

    • N. S. Averkiev
    • S. O. Slipchenko
    • I. S. Tarasov

    Physics of Semiconductor Devices Pages: 361 - 364

23. Aleksandr Leonidovich Aseev (on the 60th anniversary of his birth)

    Personalia Pages: 365 - 366

24. VIII Russian Conference on the physics of semiconductors

    Conference Pages: 367 - 368