Superionic conductivity and switching effect with memory in TlInSe2 and TlInTe2 crystals R. M. SardarlyO. A. SamedovN. A. Aliyeva Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 11 November 2011 Pages: 1387 - 1390
Electrical properties of PbTe single crystals with excess tellurium G. Z. BagiyevaN. B. MustafayevD. Sh. Abdinov Electronic Properties of Semiconductors 11 November 2011 Pages: 1391 - 1394
Temperature dependence of the band gap of FeIn2S4 single crystals I. V. BodnarS. A. Pavlukovets Electronic Properties of Semiconductors 11 November 2011 Pages: 1395 - 1398
Anomalously low thermal conductivity and thermoelectric properties of new cationic clathrates in the Sn-In-As-I system A. V. ShevelkovE. A. KelmV. G. Kytin Electronic Properties of Semiconductors 11 November 2011 Pages: 1399 - 1403
Low-temperature investigations of chemically deposited films of substitutional solid solutions based on lead and tin (II) selenides V. Ph. MarkovH. N. MukhamedzyanovZ. I. Smirnova Electronic Properties of Semiconductors 11 November 2011 Pages: 1404 - 1407
Magnetic Properties of Fe x Mn1−x In2S4 Alloy Single Crystals I. V. BodnarS. V. Trukhanov Electronic Properties of Semiconductors 15 December 2011 Pages: 1408 - 1413
Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiO x Films after Low-Temperature Annealing N. A. VlasenkoN. V. SopinskiiM. A. Mukhlyo Surfaces, Interfaces, and Thin Films 14 December 2011 Pages: 1414 - 1419
Modification of electrical and optical properties of ZnO films under ultraviolet irradiation A. N. GruzintsevW. T. Volkov Surfaces, Interfaces, and Thin Films 11 November 2011 Pages: 1420 - 1424
Optical Properties of Epitaxial Al x In1−x Sb Alloy Layers O. S. KomkovA. N. SemenovS. V. Ivanov Surfaces, Interfaces, and Thin Films 23 December 2011 Pages: 1425 - 1429
Electroluminescence at a wavelength of 1.54 μm in Si:Er/Si structures consisting of a number of p-n junctions V. P. KuznetsovM. V. StepihovaZ. F. Krasilnik Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 11 November 2011 Pages: 1430 - 1432
Spinodal Decomposition of Ga x In1−x As y P1−y Quaternary Alloys P. V. SeredinA. V. GlotovI. S. Tarasov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 15 December 2011 Pages: 1433 - 1440
Spin filtration of unpolarized electrons by impurity centers in semiconductors E. G. BobinV. L. Berdinskiy Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 11 November 2011 Pages: 1441 - 1446
Shubnikov-de-Haas and de-Haas-van-Alphen oscillations in silicon nanostructures N. T. BagraevE. S. BrilinskayaV. V. Romanov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 11 November 2011 Pages: 1447 - 1452
Features of the spectral dependences of transmittance of organic semiconductors based on tert-butyl substituted lutetium phthalocyanine molecules I. A. BelogorokhovE. V. TikhonovD. R. Khokhlov Amorphous, Vitreous, and Organic Semiconductors 11 November 2011 Pages: 1453 - 1456
Study of the transport properties of organic semiconductors based on europium diphthalocyanine and bi-tris-phthalocyanine complexes with ortho-bis(oxymethyl)phenyl bridge and based on erbium and europium dinaphthalocyanine complexes I. A. BelogorokhovE. V. TikhonovD. R. Khokhlov Amorphous, Vitreous, and Organic Semiconductors 11 November 2011 Pages: 1457 - 1461
Crystallization ability and optical and electrical properties of Ge10(Se-Te)90 and Ge30(Se-Te)70 chalcogenide glassy semiconductors S. A. GrudinkinV. I. BaharevV. G. Golubev Amorphous, Vitreous, and Organic Semiconductors 11 November 2011 Pages: 1462 - 1466
Polarization characteristics of surface plasmon resonance in SnO2 nanocluster films V. S. GrinevichL. S. MaximenkoL. N. Filevskaya Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 11 November 2011 Pages: 1467 - 1473
Photoconductivity of PbTe:In films with variable microstructure V. I. ChernichkinA. A. DobrovolskyD. R. Khokhlov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 11 November 2011 Pages: 1474 - 1478
Synthesis,Structure and Electrical Properties of(SnO2) x (In2O3)1−x (x=0.5–1) Nanocomposites S. I. RembezaP. E. VoronovE. S. Rembeza Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 15 December 2011 Pages: 1479 - 1482
Structurization of submonolayer carbon coatings deposited in a low-pressure microwave plasma on single-crystal silicon V. Ya. ShanyginR. K. Yafarov Carbon Systems 11 November 2011 Pages: 1483 - 1488
Technological Features of Irradiation of Sip +-n-n + Diodes with Electrons at Elevated Temperatures I. G. MarchenkoN. E. Zhdanovich Physics of Semiconductor Devices 15 December 2011 Pages: 1489 - 1493
Capture of charge carriers and output power of a quantum well laser Z. N. SokolovaI. S. TarasovL. V. Asryan Physics of Semiconductor Devices 11 November 2011 Pages: 1494 - 1500
Effect of temperature on the electroluminescent properties of mid-IR (λmax ≈ 4.4 μm) flip-chip LEDs based on an InAs/InAsSbP heterostructure A. A. PetuhovN. D. Il’inskayaYu. P. Yakovlev Physics of Semiconductor Devices 11 November 2011 Pages: 1501 - 1504
The influence of prolonged storage and forward-polarity voltage on the efficiency of CdS/CdTe-based film solar cells G. S. KhrypunovV. R. KopachN. V. Deyneko Physics of Semiconductor Devices 11 November 2011 Pages: 1505 - 1511
The influence of thermal annealing on the optical properties of nanocrystalline zinc sulfide films P. N. KrylovF. Z. GilmutdinovI. V. Fedotova Fabrication, Treatment, and Testing of Materials and Structures 11 November 2011 Pages: 1512 - 1516
Comparison of the homoepitaxial growth of AlN crystals on Al and N surfaces A. A. WolfsonE. N. Mokhov Fabrication, Treatment, and Testing of Materials and Structures 11 November 2011 Pages: 1517 - 1518
Quantum-chemical study of adsorption of 2-propanol molecule on a GaAs (100) surface M. V. Lebedev Fabrication, Treatment, and Testing of Materials and Structures 11 November 2011 Pages: 1519 - 1523
