Abstract
A special experimental technique capable of excluding the influence of differences between sources, substrate crystals, and growth process parameters has been employed to correctly compare the quality of homoepitaxial AlN layers grown by sublimation on Al and N surfaces of the substrate crystal with 〈0001〉 orientation. It has been found that, in most cases, the quality of layers grown on the N surface is somewhat higher; however, no differences have been observed in separate cases. Hence the conclusion follows that the range of growth process parameters is substantially wider for the N side compared with the Al side.
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B. M. Epelbaum, C. Seitz, A. Magerl, M. Bickermann, and A. Winnacker, J. Cryst. Growth 265, 577 (2004).
Z. G. Herro, D. Zhuang, R. Schlesser, R. Collazo, and Z. Sitar, J. Cryst. Growth 286, 205 (2006).
E. N. Mokhov, O. V. Avdeev, I. S. Barash, T. Yu. Chemekova, A. D. Roenkov, A. S. Segal, A. A. Wolfson, Yu. N. Makarov, M. G. Ramm, and H. Helava, J. Cryst. Growth 281, 93 (2005).
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Original Russian Text © A.A. Wolfson, E.N. Mokhov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 11, pp. 1576–1578.
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Wolfson, A.A., Mokhov, E.N. Comparison of the homoepitaxial growth of AlN crystals on Al and N surfaces. Semiconductors 45, 1517–1518 (2011). https://doi.org/10.1134/S1063782611110285
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DOI: https://doi.org/10.1134/S1063782611110285