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Temperature dependence of the band gap of FeIn2S4 single crystals

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Abstract

Single crystals of the FeIn2S4 ternary compound are grown by the Bridgman method. The composition and structure of the crystals are established. The transmittance spectra of the crystals in the region of the fundamental absorption edge are studied in the temperature range of T = 20–300 K. The band gap E g and its temperature dependence E g (T) are determined from the transmittance spectra. It is shown that the shape of the dependence E g (T) is typical of complex compounds.

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Authors and Affiliations

  1. Belarussian State University of Informatics and Radio Electronics, Minsk, 220013, Belarus

    I. V. Bodnar & S. A. Pavlukovets

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  1. I. V. Bodnar
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  2. S. A. Pavlukovets
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Correspondence to I. V. Bodnar.

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Original Russian Text © I.V. Bodnar, S.A. Pavlukovets, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 11, pp. 1450–1453.

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Bodnar, I.V., Pavlukovets, S.A. Temperature dependence of the band gap of FeIn2S4 single crystals. Semiconductors 45, 1395–1398 (2011). https://doi.org/10.1134/S1063782611110078

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  • DOI: https://doi.org/10.1134/S1063782611110078

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