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Synthesis,Structure and Electrical Properties of(SnO2) x (In2O3)1−x (x=0.5–1) Nanocomposites

  • Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
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Abstract

The experimental results of synthesizing thin films (<1 μm thick) of (SnO2) x (In2O3)1 − x (x = 0.5–1 wt) nanocomposites fabricated by high-frequency magnetron sputtering of metal-oxide targets in a controlled Ar + O2 atmosphere are presented. The films, deposited on hot substrates (400°C), are studied by the X-ray diffraction analysis, atomic-force microscopy, and optical and electrical methods. The effect of the synthesis conditions and film composition on the size of crystalline grains, band gap, and the concentration and mobility of free charge carriers was determined. It is shown that films of the composition (SnO2) x (In2O3)1 − x with x = 0.9 are the most promising for applications in gas sensorics.

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Authors and Affiliations

  1. Voronezh State Technical University, Moskovskii pr. 14, Voronezh, 394026, Russia

    S. I. Rembeza & E. S. Rembeza

  2. North Caucasus State Technical University, pr. Kulakova 2\2, Stavropol, 355029, Russia

    P. E. Voronov & B. M. Sinelnikov

Authors
  1. S. I. Rembeza
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  2. P. E. Voronov
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  3. B. M. Sinelnikov
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  4. E. S. Rembeza
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Correspondence to S. I. Rembeza.

Additional information

Original Russian Text © S.I. Rembeza, P.E. Voronov, B.M. Sinelnikov, E.S. Rembeza, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 11, pp. 1538–1541.

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Rembeza, S.I., Voronov, P.E., Sinelnikov, B.M. et al. Synthesis,Structure and Electrical Properties of(SnO2) x (In2O3)1−x (x=0.5–1) Nanocomposites. Semiconductors 45, 1479–1482 (2011). https://doi.org/10.1134/S1063782611110212

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  • DOI: https://doi.org/10.1134/S1063782611110212

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