Abstract
Features of surface structurization of submonolayer carbon coatings deposited in highly ionized ultrahigh-frequency low-pressure plasma on silicon wafers with (111) and (100) crystallographic orientations are studied. It is shown that the size and surface density of nanostructured carbon formations are controlled by the atomic microstructure of the silicon free surface of these crystallographic orientations and its modifications depending on deposition and annealing conditions. We show the fundamental possibility of fabricating integrated columnar nanostructures with surface densities to (4–5) × 109 cm−2 and higher than 400 nm by highly anisotropic etching using the obtained carbon island nanostructures as a mask coating on singlecrystal (100) silicon.
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Original Russian Text © V.Ya. Shanygin, R.K. Yafarov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 11, pp. 1542–1548.
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Shanygin, V.Y., Yafarov, R.K. Structurization of submonolayer carbon coatings deposited in a low-pressure microwave plasma on single-crystal silicon. Semiconductors 45, 1483–1488 (2011). https://doi.org/10.1134/S1063782611110248
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DOI: https://doi.org/10.1134/S1063782611110248