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Shubnikov-de-Haas and de-Haas-van-Alphen oscillations in silicon nanostructures

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

The dependences of the longitudinal resistance and the static magnetic susceptibility on the magnetic field applied perpendicularly to the plane of an ultranarrow silicon quantum well confined by δ barriers heavily doped with boron demonstrate the high-temperature Shubnikov-de-Haas and de-Haas-van-Alphen oscillations in low magnetic fields. The results are indicative of the implementation of the high-field approximation μB ≫ 1 under these conditions due to the small effective mass of two-dimensional heavy holes, which is confirmed by measurements of temperature dependences of the de-Haas-van-Alphen oscillations.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    N. T. Bagraev, D. S. Gets, L. E. Klyachkin & A. M. Malyarenko

  2. St. Petersburg State Polytechnical University, St. Petersburg, 195251, Russia

    E. S. Brilinskaya & V. V. Romanov

Authors
  1. N. T. Bagraev
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  2. E. S. Brilinskaya
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  3. D. S. Gets
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  4. L. E. Klyachkin
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  5. A. M. Malyarenko
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  6. V. V. Romanov
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Correspondence to N. T. Bagraev.

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Original Russian Text © N.T. Bagraev, E.S. Brilinskaya, D.S. Gets, L.E. Klyachkin, A.M. Malyarenko, V.V. Romanov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 11, pp. 1503–1508.

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Bagraev, N.T., Brilinskaya, E.S., Gets, D.S. et al. Shubnikov-de-Haas and de-Haas-van-Alphen oscillations in silicon nanostructures. Semiconductors 45, 1447–1452 (2011). https://doi.org/10.1134/S1063782611110030

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  • DOI: https://doi.org/10.1134/S1063782611110030

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