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Technological Features of Irradiation of Sip +-n-n + Diodes with Electrons at Elevated Temperatures

  • Physics of Semiconductor Devices
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Abstract

The behavior of the lifetime of nonequilibrium charge carriers τp, the reverse current I R, and the forward-voltage drop U F in electron-irradiated (E irr = 6 MeV) commercial p +-n-n + diodes at irradiation temperatures in the range of T irr = 20–400°C is studied. Studies have been performed for samples fabricated on a single-crystal Si substrate either doped with phosphorus in the course of growth by the Czochralski method (Cz-n-Si:P) or doped with phosphorus by nuclear transmutations, neutron-transmutation doped Si (NTD n-Si:P). It is shown that, by choosing the temperature conditions of technological irradiation, one can solve the problem of attaining small values of τp at a minimal increase in U F and I R in fast-response diodes. It is established that, in the case of comparable variations in τp in the base region of diodes, the best relation between U F and I R is observed at T irr = 300°C in n-Si:P samples doped by the Czochralski method and at T irr = 350°C in samples doped by reactions induced by thermal neutrons.

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Authors and Affiliations

  1. State Scientific and Production Association “Scientific-Practical Materials Research Centre”, National Academy of Sciences of Belarus, Minsk, 22072, Belarus

    I. G. Marchenko & N. E. Zhdanovich

Authors
  1. I. G. Marchenko
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  2. N. E. Zhdanovich
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Correspondence to I. G. Marchenko.

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Original Russian Text © I.G. Marchenko, N.E. Zhdanovich, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 11, pp. 1549–1552.

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Marchenko, I.G., Zhdanovich, N.E. Technological Features of Irradiation of Sip +-n-n + Diodes with Electrons at Elevated Temperatures. Semiconductors 45, 1489–1493 (2011). https://doi.org/10.1134/S1063782611110182

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