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Optical Properties of Epitaxial Al x In1−x Sb Alloy Layers

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Abstract

Optical studies of unstrained narrow-gap Al x In1 − x Sb semiconductor alloy layers are carried out. The layers are grown by molecular-beam epitaxy on semi-insulating GaAs substrates with an AlSb buffer. The composition of the alloys is varied within the range of x = 0–0.52 and monitored by electron probe microanalysis. The band gap E g is determined from the fundamental absorption edge with consideration for the nonparabolicity of the conduction band. The refined bowing parameter in the experimental dependence E g (x) for the Al x In1 − x Sb alloys is 0.32 eV. This value is by 0.11 eV smaller than the commonly referred one.

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Authors and Affiliations

  1. St. Petersburg State Electrotechnical University LETI, St. Petersburg, 197376, Russia

    O. S. Komkov, D. D. Firsov & A. N. Pikhtin

  2. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. N. Semenov, B. Ya. Meltser, V. A. Solov’ev, T. V. Popova & S. V. Ivanov

Authors
  1. O. S. Komkov
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  2. A. N. Semenov
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  3. D. D. Firsov
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  4. B. Ya. Meltser
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  5. V. A. Solov’ev
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  6. T. V. Popova
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  7. A. N. Pikhtin
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  8. S. V. Ivanov
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Correspondence to O. S. Komkov.

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Original Russian Text © O.S. Komkov, A.N. Semenov, D.D. Firsov, B.Ya. Meltser, V.A. Solov’ev, T.V. Popova, A.N. Pikhtin, S.V. Ivanov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 11, pp. 1481–1485.

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Komkov, O.S., Semenov, A.N., Firsov, D.D. et al. Optical Properties of Epitaxial Al x In1−x Sb Alloy Layers. Semiconductors 45, 1425–1429 (2011). https://doi.org/10.1134/S1063782611110145

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  • DOI: https://doi.org/10.1134/S1063782611110145

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