1. Calculation of the size-distribution function for quantum dots at the kinetic stage of growth

   • V. G. Dubrovskiĭ

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1123 - 1130

2. Correlation dependences in infrared spectra of metal phthalocyanines

   • A. V. Ziminov
   • S. M. Ramsh
   • T. A. Yurre

   Electronic and Optical Properties of Semiconductors Pages: 1131 - 1136

3. Fabrication and microwavemicrowave photoconductivity of CdSe semiconductor films

   • Yu. V. Meteleva
   • G. F. Novikov

   Electronic and Optical Properties of Semiconductors Pages: 1137 - 1144

4. Two series of “dislocation” photoluminescence bands in cadmium telluride crystals

   • N. I. Tarbaev
   • G. A. Shepel’skii

   Electronic and Optical Properties of Semiconductors Pages: 1145 - 1150

5. Magnetic ordering in crystalline Si implanted with Co ions with intermediate doses

   • N. A. Poklonskiĭ
   • N. M. Lapchuk
   • A. O. Korobko

   Electronic and Optical Properties of Semiconductors Pages: 1151 - 1154

6. Investigation of the effect of oxygen on the cathodoluminescence spectra and band gap of the ZnS_xSe_1-x alloy

   • N. K. Morozova
   • I. A. Karetnikov
   • V. B. Ikonnikov

   Electronic and Optical Properties of Semiconductors Pages: 1155 - 1161

7. Optical study of resonant states in GaN _x As_1−x

   • A. A. Gutkin
   • P. N. Brunkov
   • L. Eaves

   Electronic and Optical Properties of Semiconductors Pages: 1162 - 1164

8. Effect of the levels of intrinsic defects in the CdP₂ band gap on electrical characteristics of corresponding structures with the Schottky barrier

   • I. G. Stamov
   • D. V. Tkachenko

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1165 - 1172

9. The mechanism of current flow in an alloyed In-GaN ohmic contact

   • T. V. Blank
   • Yu. A. Gol’dberg
   • E. A. Posse

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1173 - 1177

10. Concentration-elastic-stress instabilities in the distribution of ions and neutral particles in the insulator layer at the semiconductor surface

    • E. I. Gol’dman

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1178 - 1187

11. Temperature dependence of photoluminescence of CdS nanoclusters formed in the Langmuir-Blodgett film matrix

    • E. A. Bagaev
    • K. S. Zhuravlev
    • L. L. Sveshnikova

    Low-Dimensional Systems Pages: 1188 - 1192

12. Photoluminescence of erbium ions in heterostructures with silicon nanocrystals

    • D. M. Zhigunov
    • O. A. Shalygina
    • M. Zacharias

    Low-Dimensional Systems Pages: 1193 - 1197

13. Electrical properties and photoluminescence of SiO_x layers with Si nanocrystals in relation to the SiO_x composition

    • I. V. Antonova
    • M. B. Gulyaev
    • J. Jedrzejewski

    Low-Dimensional Systems Pages: 1198 - 1203

14. Simulation of capacitance-voltage characteristics of heterostructures with quantum wells using a self-consistent solution of the Schrödinger and Poisson equations

    • V. I. Zubkov

    Low-Dimensional Systems Pages: 1204 - 1208

15. Nondiffusive weak localization in two-dimensional systems with spin-orbit splitting of the spectrum

    • M. M. Glazov
    • L. E. Golub

    Low-Dimensional Systems Pages: 1209 - 1217

16. Influence of holmium impurities on photoelectric properties of As₂Se₃ and (As₂S₃)_0.3(As₂Se₃)_0.7

    • I. I. Burdiyan
    • E. A. Senokosov
    • R. A. Pynzar’

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites Pages: 1218 - 1221

17. Oxidative-gravimetric porosimetry of macroporous silicon

    • A. A. Nechitaĭlov
    • E. V. Astrova
    • S. Yu. Kameneva

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semicronductor Composites Pages: 1222 - 1226

18. Effect of extreme radiation fluences on parameters of SiC nuclear particle detectors

    • A. M. Ivanov
    • A. A. Lebedev
    • N. B. Strokan

    Physics of Semiconductor Devices Pages: 1227 - 1231

19. Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs

    • S. A. Blokhin
    • A. V. Sakharov
    • J. Y. Chi

    Physics of Semiconductor Devices Pages: 1232 - 1236

20. The Wannier-Stark effects in the 6H-SiC planar junction field-effect transistors with a p-n junction as the gate

    • V. I. Sankin
    • P. P. Shkrebiĭ
    • A. A. Lebedev

    Physics of Semiconductor Devices Pages: 1237 - 1241

21. High-efficiency (49%) and high-power photovoltaic cells based on gallium antimonide

    • V. P. Khvostikov
    • M. G. Rastegaeva
    • V. M. Andreev

    Physics of Semiconductor Devices Pages: 1242 - 1246